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Suprem-III User´s Manual
K.MF Num Used in R. Reif’s epitaxial doping model (see reference in EPITAXY
statement). K.mf is a kinetic coefficient controlling the rate-limiting
step of the dopant incorporation process.
(unit: centimetersˆ(-2) minutesˆ(-1) atmospheresˆ(-1))
(default: the current value.)
(synonym: )
K.P Num Used in R. Reif’s epitaxial doping model (see reference in EPITAXY
statement). K.p is a thermodynamic constant relating the dopant
species concentration in solid silicon and gas phase.
(unit: centimetersˆ(-3) atmospheresˆ(-1))
(default: the current value.)
(synonym: )
NAME Char The name of the impurity.
(unit: )
(default: the last name specified.)
(synonym: )
NITRIDE Log Specifies that the material dependent parameters apply to arsenic in silicon
nitride.
(unit: )
(default: false.)
(synonym: )
OXIDE Log Specifies that the material dependent parameters apply to arsenic in silicon
dioxide.
(unit: )
(default: false.)
(synonym: )
POLYSILI Log Specifies that the material dependent parameters apply to arsenic in
polysilicon.
(unit: )
(default: false.)
(synonym: )
Q.SITES Num Effective density of segregation sites at a grain boundary.
(unit: sites/cmˆ2.)
(default: the current value.)
(synonym: )
SILICON Log Specifies that the material dependent parameters apply to silicon.
(unit: )
(default: false.)
(synonym: )
The ARSENIC statement is an alias for the IMPURITY statement with an index of three and is used to define
or modify the parameters and coefficients associated with arsenic as an impurity. Not all of the parameters of
the IMPURITY statement apply to arsenic and so are not listed here.