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Suprem-III User´s Manual
MIN.GRAI Num The minimum polysilicon grain size. Used for ‘as deposited’ LPCVD
polysilicon when the temperature is below that specified by TEMP.BRE
(unit: microns)
(default: the current value.)
(synonym: )
NAME Char The name of the material.
(unit: )
(default: the current name of the material.)
(synonym: )
NI.0 Num The pre-factor used in the calculation of the intrinsic carrier concentration.
(unit: (carriers/cmˆ3)(degrees Kelvin)ˆ(3/2).)
(default: the current value.)
(synonym: )
NI.E Num The activation energy used in the calculation of the intrinsic carrier concentration.
(unit: electron volts.)
(default: the current value.)
(synonym: )
NI.F Num The exponent to the absolute temperature used in the calculation of the
intrinsic carrier concentration.
(unit: )
(default: the current value.)
(synonym: )
N.VALENC Num The carrier concentration in the valence band of the material.
(unit: carriers/cmˆ3.)
(default: the current value.)
(synonym: )
N.CONDUC Num The carrier concentration in the conduction band of the material.
(unit: carriers/cmˆ3.)
(default: the current value.)
(synonym: )
OEDK.0 Num The pre-exponential constant used to calculate the relative contribution of
oxidation enhanced diffusion to intrinsic diffusion.
(unit: )
(default: the current value.)
(synonym: )
OEDK.E Num The activation energy used to calculate the relative contribution of oxidation
enhanced diffusion to intrinsic diffusion.
(unit: electron volts)
(default: the current value.)
(synonym: )
OED.RATE Num The power dependence of oxidation enhanced diffusion on the oxidation
rate.
(unit: )
(default: the current value.)
(synonym: )