Suprem III - Stanford Technology CAD Home Page

-34-
Suprem-III User´s Manual
PAR.H.E Num The activation energy of the parabolic oxidation rate for temperatures
above the breakpoint set by P.BREAKP.
(unit: electron volts.)
(default: the current value.)
(synonym: )
PAR.L.0 Num The pre-exponential constant of the parabolic oxidation rate for temperatures
below the breakpoint set by P.BREAKP.
(unit: micronsˆ2/minute.)
(default: the current value.)
(synonym: )
PAR.L.E Num The activation energy of the parabolic oxidation rate for temperatures below
the breakpoint set by P.BREAKP.
(unit: electron volts.)
(default: the current value.)
(synonym: )
PAR.PDEP Num The pressure dependence factor for the parabolic oxidation rate.
(unit: )
(default: the current value.)
(synonym: )
PRESSURE Num The default ambient pressure.
(unit: atmospheres.)
(default: the current value.)
(synonym: )
THINOX.0 Num The pre-exponential constant of the thin oxide growth rate parameter.
(unit: microns/minute.)
(default: the current value.)
(synonym: )
THINOX.E Num The activation energy of the thin oxide growth rate parameter.
(unit: electron volts.)
(default: the current value.)
(synonym: )
THINOX.L Num The characteristic length of the thin oxide growth rate parameter.
(unit: microns.)
(default: the current value.)
(synonym: )
Log Specifies that the linear growth rate and thin oxide growth rate parameters
apply to orientation silicon.
(unit: )
(default: false.)
(synonym: )
Log Specifies that the linear growth rate and thin oxide growth rate parameters
apply to orientation silicon.
(unit: )
(default: false.)
(synonym: )
Log Specifies that the linear growth rate and thin oxide growth rate parameters
apply to orientation silicon.
(unit: )
(default: false.)