Suprem III - Stanford Technology CAD Home Page

-65-
Suprem-III User´s Manual
RATIO.0 Num The pre-exponential constant used to calculate the ratio of the silicon
self-diffusivities in the grain and in the bulk. Actually the ratio of the
pre-exponential factors for the two self-diffusivities
(unit: )
(default: the current value.)
(synonym: )
RATIO.E Num The activation energy used to calculate the ratio of the silicon self-diffusivities
in the grain and in the bulk. Actually the difference between
the activation energies of the two self-diffusivities
(unit: electron volts.)
(default: the current value.)
(synonym: )
SEMICOND Log Specifies that the material is a semiconductor.
(unit: )
(default: false.)
(synonym: )
SPECIES Num The number of different elements in this material.
(unit: )
(default: the current value.)
(synonym: )
TA U.0 Num The pre-exponential constant used to calculate the time dependence of
the grain interior concentration.
(unit: minutes.)
(default: the current value.)
(synonym: )
TA U.E Num The activation energy used to calculate the time dependence of the grain
interior concentration.
(unit: electron volts.)
(default: the current value.)
(synonym: )
TEMP.BRE Num For LPCVD the temperature below which the deposited polysilicon becomes
amorphous.
(unit: degrees Centigrade.)
(default: the current value.)
(synonym: )
WORK.FUN Num The work function of the material.
(unit: volts)
(default: the current value.)
(synonym: )
100.OEDF Num The orientation dependent factor for the oxidation enhanced diffusion for
oriented silicon.
(unit: )
(default: the current value.)
(synonym: )
110.OEDF Num The orientation dependent factor for the oxidation enhanced diffusion for
oriented silicon.
(unit: )
(default: the current value.)
(synonym: )