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Suprem-III User´s Manual
DX.DEFAU Num The default nominal grid spacing for any layer containing this material.
(unit: microns.)
(default: the current value.)
(synonym: )
EPSILONF Num The dielectric constant of the material relative the dielectric constant of
air.
(unit: )
(default: the current value.)
(synonym: )
GBE.0 Num The pre-exponential constant used in calculating the grain-boundary energy
(unit: )
(default: the current value.)
(synonym: )
GBE.E Num The activation energy used in calculating the grain-boundary energy.
(unit: electron volts.)
(default: the current value.)
(synonym: )
GEO.FACT Num A geometric factor used in calculating the grain growth driving force, F.
(unit: )
(default: the current value.)
(synonym: )
GSZ.H.0 Num The pre-exponential constant used in calculating the ‘as deposited’
polysilicon grain size for pressures near one atmosphere.
(unit: microns.)
(default: the current value.)
(synonym: )
GSZ.H.E Num The activation energy used in calculating the ‘as deposited’ polysilicon
grain size for pressures near one atmosphere.
(unit: electron volts.)
(default: the current value.)
(synonym: )
GSZ.L.0 Num The pre-exponential constant used in calculating the ‘as deposited’
polysilicon grain size for low pressure CVD.
(unit: microns.)
(default: the current value.)
(synonym: )
GSZ.L.E Num The activation energy used in calculating the ‘as deposited’ polysilicon
grain size for low pressure CVD.
(unit: electron volts.)
(default: the current value.)
(synonym: )
MIN.GRAI Num The minimum polysilicon grain size. Used for ‘as deposited’ LPCVD
polysilicon when the temperature is below that specified by TEMP.BRE
(unit: microns)
(default: the current value.)
(synonym: )