Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
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<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />
35. Polysilicon Statement<br />
-------------------------------<br />
material.<br />
The POLYSILI statement is used to input or modify the characteristics of polycrystalline silicon as a layer<br />
POLYSILI<br />
[ NAME= ] [ DX.DEFAU= ]<br />
[ SEMICOND ]<br />
[ SPECIES= ] [ DENSITY= ]<br />
[ AT.WT.1= ] [ AT.NUM.1= ] [ ABUND.1= ]<br />
[ DIFX.0= ] [ DIFX.E= ]<br />
[ DIMX.0= ] [ DIFM.E= ]<br />
[ DIMMX.0= ] [ DIFMM.E= ]<br />
[ DIFP.0= ] [ DIFP.E= ]<br />
[ NI.0= ] [ NI.E= ] [ NI.F= ] [ DEFECTLN= ]<br />
[ OEDK.0= ] [ OEDK.E= ] [ OED.RATE= ]<br />
[ GSZ.H.0= ] [ GSZ.H.E= ]<br />
[ GSZ.L.0= ] [ GSZ.L.E= ]<br />
[ MIN.GRAI= ] [ TEMP.BRE= ]<br />
[ RATIO.0= ] [ RATIO.E= ]<br />
[ GEO.FACT= ] [ GBE.0= ] [ GBE.E= ]<br />
[ TAU.0= ] [ TAU.E= ]<br />
[ AFFINITY= ] [ EPSILONF= ]<br />
[ N.VALENC= ] [ N.CONDUC= ] [ BAND.GAP= ]<br />
Name Type Description<br />
---- ---- -----------<br />
ABUND.1 Num The relative abundance of element one in the material. The sum of all<br />
abundances for a material must equal one.<br />
(unit: )<br />
(default: the current value.)<br />
(synonym: )<br />
AFFINITY Num The electron affinity of the material.<br />
(unit: electron volts.)<br />
(default: the current value.)<br />
(synonym: )<br />
AT .NUM.1 Num The atomic number of element one in the material.<br />
(unit: )<br />
(default: the current value.)<br />
(synonym: )<br />
AT .WT.1 Num The atomic weight of element one in the material.<br />
(unit: amu)<br />
(default: the current value.)<br />
(synonym: )<br />
BAND.GAP Num The band gap of the material.<br />
(unit: electron volts.)<br />
(default: the current value.)<br />
(synonym: )
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