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Suprem-III User´s Manual
CONCENTR Num The impurity concentration at which the structure is to be uniformly
doped.
(unit: atoms/cmˆ3.)
(default: 0.0)
(synonym: )
DX Num The nominal grid spacing to be used in the first layer of the structure at
the location specified by XDX.
(unit: microns.)
(default: That of the first layer of the input structure file; otherwise, the
default for the material in the first layer.)
(synonym: )
FIRSTIME Log Indicates that no coefficient file exists. Used the first time the program is
executed to create the default coefficient file.
(unit: )
(default: false.)
(synonym: )
GRAINSIZ Num Specifies the polysilicon grain size.
(unit: microns.)
(default: )
(synonym: )
MIN.DX Num The minimum grid spacing to be used in the first layer of the structure.
(unit: microns.)
(default: That of the first layer of the input structure file; otherwise,
0.001.)
(synonym: )
NITRIDE Log Specifies that silicon nitride is the material in the first layer.
(unit: )
(default: false.)
(synonym: )
OXIDE Log Specifies that silicon dioxide is the material in the first layer.
(unit: )
(default: false.)
(synonym: )
PHOSPHOR Log Specifies that the initial structure is to be doped uniformly with phosphorus.
(unit: )
(default: false.)
(synonym: )
POLYSILI Log Specifies that polycrystalline silicon is the material in the first layer.
(unit: )
(default: false.)
(synonym: )
PRESSURE Num Specifies the polysilicon deposition pressure.
(unit: atmospheres.)
(default: 1.0)
(synonym: )