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Suprem-III User´s Manual
SUPREM-III Example 1. NMOS Silicon Gate
Source/drain regions.
File s3ex1c
Initialize silicon substrate.
Etch polysilicon and oxide over source/drain regions.
Implant Arsenic for source/drain regions.
Drive-in Arsenic and re-oxidize source/drain regions.
Etch contact holes to gate, source, and drain regions.
Deposit Phosphorus doped SiO2 using CVD.
Increase the diffusivity of phosphorus in oxide by
two orders of magnitude.
Reflow glass to smooth surface and dope contact holes.
layer material type thickness dx dxmin top bottom orientation
no.
(microns) (microns) node node or grain size
2 OXIDE 0.7500 0.0100 0.0010 287 362
1 SILICON 1.4282 0.0050 0.0010 363 500
Integrated Dopant
layer Net Total
no. active chemical active chemical
2 0.0000e+00 7.3653e+16 0.0000e+00 7.3654e+16
1 5.4178e+15 5.5214e+15 5.4184e+15 5.5221e+15
sum 5.4178e+15 7.9175e+16 5.4184e+15 7.9176e+16
Integrated Dopant
layer PHOSPHORUS ARSENIC
no. active chemical active chemical
2 0.0000e+00 7.3653e+16 0.0000e+00 9.5986e+11
1 6.2501e+14 6.7332e+14 4.7931e+15 4.8484e+15
sum 6.2501e+14 7.4326e+16 4.7931e+15 4.8494e+15
Integrated Dopant
layer BORON
no. active chemical
2 0.0000e+00 2.1491e+10
1 3.2537e+11 3.2537e+11
sum 3.2537e+11 3.4686e+11
Junction Depths and Integrated Dopant
Concentrations for Each Diffused Region
layer region type junction depth net total
no. no. (microns) active Qd chemical Qd
2 1 n 0.0000 0.0000e+00 7.3653e+16
1 2 n 0.0000 5.4178e+15 5.5220e+15
1 1 p 1.2072 1.8688e+10 3.0137e+10
Reopen contact holes.
Deposit Aluminum.
Plot the chemical impurity distributions at this point.