Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
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<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />
IONFILE2 Char Specifies the secondary ion implant range data file for implants using the<br />
analytic distributions. This file will be searched for the range statistics<br />
when implanting the compound ions containing phosphorus.<br />
(unit: )<br />
(default: the last file specified.)<br />
(synonym: )<br />
K.A Num Used in R. Reif’s epitaxial doping model (see reference in EPITAXY<br />
statement). K.a is a thermodynamic constant relating the dopant<br />
species concentration in solid silicon and adsorbed layer.<br />
(unit: centimeters)<br />
(default: the current value.)<br />
(synonym: )<br />
K.MF Num Used in R. Reif’s epitaxial doping model (see reference in EPITAXY<br />
statement). K.mf is a kinetic coefficient controlling the rate-limiting<br />
step of the dopant incorporation process.<br />
(unit: centimetersˆ(-2) minutesˆ(-1) atmospheresˆ(-1))<br />
(default: the current value.)<br />
(synonym: )<br />
K.P Num Used in R. Reif’s epitaxial doping model (see reference in EPITAXY<br />
statement). K.p is a thermodynamic constant relating the dopant<br />
species concentration in solid silicon and gas phase.<br />
(unit: centimetersˆ(-3) atmospheresˆ(-1))<br />
(default: the current value.)<br />
(synonym: )<br />
MISFITST Num The prefactor in the high concentration dependent expression for calculating<br />
the bandgap narrowing due to the lattice misfit strain from high<br />
concentrations of phosphorus.<br />
(unit: electron volts-cmˆ3.)<br />
(default: the current value.)<br />
(synonym: )<br />
MSF100FA Num The orientation factor in orientation silicon for bandgap narrowing<br />
due to lattice misfit strain from high concentrations of phosphorus.<br />
(unit: )<br />
(default: the current value.)<br />
(synonym: )<br />
MSF110FA Num The orientation factor in orientation silicon for bandgap narrowing<br />
due to lattice misfit strain from high concentrations of phosphorus.<br />
(unit: )<br />
(default: the current value.)<br />
(synonym: )<br />
MSF111FA Num The orientation factor in orientation silicon for bandgap narrowing<br />
due to lattice misfit strain from high concentrations of phosphorus.<br />
(unit: )<br />
(default: the current value.)<br />
(synonym: )<br />
NAME Char The name of the impurity.<br />
(unit: )<br />
(default: the last name specified.)<br />
(synonym: )
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