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Suprem III - Stanford Technology CAD Home Page

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<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />

<strong>Suprem</strong>-<strong>III</strong> simulation through the field oxide isolation region after all<br />

processing steps. Isolation has been achieved since the substrate is all<br />

p type, although barely. The base implant is also seen in the field oxide.

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