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-20-<br />

<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />

14. Boron Statement<br />

-------------------------<br />

The BORON statement is used to input or modify the physical or model coefficients associated with boron<br />

as a dopant impurity.<br />

BORON<br />

[ NAME= ] [ ACCEPTOR ]<br />

[ AT.WT= ] [ AT.NUMB= ]<br />

[ IONFILE1= ] [ IONFILE2= ]<br />

[ ( ( SILICON<br />

[ FII.0= ] [ FII.E= ]<br />

[ K.MF= ] [ K.A= ] [ K.P= ]<br />

)<br />

| ( POLYSILI<br />

[ ENTROPY= ] [ HEAT.SEG= ] [ Q.SITES= ]<br />

[ FII.0= ] [ FII.E= ]<br />

)<br />

| ( OXIDE | NITRIDE | ALUMINUM )<br />

[ ELECT.ST= ]<br />

[ DIX.0= ] [ DIX.E= ]<br />

[ DIP.0= ] [ DIP.E= ]<br />

]<br />

Name Type Description<br />

---- ---- -----------<br />

ACCEPTOR Log Specifies that the impurity is an acceptor in silicon.<br />

(unit: )<br />

(default: false.)<br />

(synonym: )<br />

ALUMINUM Log Specifies that the material dependent parameters apply to boron in aluminum.<br />

(unit: )<br />

(default: false.)<br />

(synonym: )<br />

AT .NUMB Num The atomic number of the impurity.<br />

(unit: )<br />

(default: the current value.)<br />

(synonym: )<br />

AT .WT Num The atomic weight of the impurity.<br />

(unit: amu)<br />

(default: the current value.)<br />

(synonym: )<br />

DIP.0 Num The pre-exponential constant of the diffusion coefficient of the impurity<br />

diffusing with positive vacancies.<br />

(unit: micronsˆ2/minute.)<br />

(default: the current value.)<br />

(synonym: )

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