Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
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<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />
14. Boron Statement<br />
-------------------------<br />
The BORON statement is used to input or modify the physical or model coefficients associated with boron<br />
as a dopant impurity.<br />
BORON<br />
[ NAME= ] [ ACCEPTOR ]<br />
[ AT.WT= ] [ AT.NUMB= ]<br />
[ IONFILE1= ] [ IONFILE2= ]<br />
[ ( ( SILICON<br />
[ FII.0= ] [ FII.E= ]<br />
[ K.MF= ] [ K.A= ] [ K.P= ]<br />
)<br />
| ( POLYSILI<br />
[ ENTROPY= ] [ HEAT.SEG= ] [ Q.SITES= ]<br />
[ FII.0= ] [ FII.E= ]<br />
)<br />
| ( OXIDE | NITRIDE | ALUMINUM )<br />
[ ELECT.ST= ]<br />
[ DIX.0= ] [ DIX.E= ]<br />
[ DIP.0= ] [ DIP.E= ]<br />
]<br />
Name Type Description<br />
---- ---- -----------<br />
ACCEPTOR Log Specifies that the impurity is an acceptor in silicon.<br />
(unit: )<br />
(default: false.)<br />
(synonym: )<br />
ALUMINUM Log Specifies that the material dependent parameters apply to boron in aluminum.<br />
(unit: )<br />
(default: false.)<br />
(synonym: )<br />
AT .NUMB Num The atomic number of the impurity.<br />
(unit: )<br />
(default: the current value.)<br />
(synonym: )<br />
AT .WT Num The atomic weight of the impurity.<br />
(unit: amu)<br />
(default: the current value.)<br />
(synonym: )<br />
DIP.0 Num The pre-exponential constant of the diffusion coefficient of the impurity<br />
diffusing with positive vacancies.<br />
(unit: micronsˆ2/minute.)<br />
(default: the current value.)<br />
(synonym: )