Suprem III - Stanford Technology CAD Home Page

-153-
Suprem-III User´s Manual
layer material type thickness dx dxmin top bottom orientation
no.
(microns) (microns) node node or grain size
3 POLYSILICON 0.5000 0.0100 0.0010 297 347 0.6130
2 OXIDE 0.7683 0.0100 0.0010 348 377
1 SILICON 2.6620 0.0100 0.0010 378 500
Integrated Dopant
layer Net Total
no. active chemical active chemical
3 9.6452e+15 1.7004e+16 9.6452e+15 1.7004e+16
2 0.0000e+00 3.6407e+12 0.0000e+00 1.6968e+13
1 -4.0361e+12 -4.0361e+12 4.0361e+12 4.0361e+12
sum 9.6411e+15 1.7004e+16 9.6492e+15 1.7025e+16
Integrated Dopant
layer BORON PHOSPHORUS
no. active chemical active chemical
3 1.2793e+07 1.2793e+07 9.6452e+15 1.7004e+16
2 0.0000e+00 6.6638e+12 0.0000e+00 1.0305e+13
1 4.0361e+12 4.0361e+12 0.0000e+00 0.0000e+00
sum 4.0361e+12 1.0700e+13 9.6452e+15 1.7014e+16
Junction Depths and Integrated Dopant
Concentrations for Each Diffused Region
layer region type junction depth net total
no. no. (microns) active Qd chemical Qd
3 1 n 0.0000 9.6452e+15 1.7004e+16
2 2 n 0.0000 0.0000e+00 9.7384e+12
2 1 p 0.0430 0.0000e+00 6.6450e+12
1 1 p 0.0000 4.0361e+12 4.0361e+12
Save the structure at this point.
End Suprem-III