Suprem III - Stanford Technology CAD Home Page

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Suprem-III User´s Manual
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*** Suprem-III ***
*** version 1B rev. 8628 ***
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Tue Oct 27 16:36:45 1987
Commands input from file: s3ex2d.in
1... Title Suprem-III Example 2. Bipolar Poly Doped Emitter
2... $ Initial isolation region formation.
3... $ File s3ex2d.
4... Comment Initialize the silicon substrate.
5... Initialize Silicon, Boron Concentration=5E14
... + Thickness=3 dX=.03 Spaces=75
6... Comment Grow masking oxide for the non-active regions.
7... Diffusion Temperature=1150 Time=100 WetO2
8... Comment Implant and drive in the antimony buried layer.
9... Implant Antimony Dose=1E15 Energy=80
10... Diffusion Temperature=1150 Time=15 DryO2
11... Diffusion Temperature=1150 Time=300
12... Print Layer
13... Plot Net Chemical Xmax=4.5
14... Comment Etch off the oxide.
15... Etch Oxide
16... Comment Add 1.6 microns of arsenic doped epi.
17... Epitaxy Temperature=1050 Time=4 Growth.Rate=.4
... + Arsenic Gas.Conc=5E15
18... Comment Grow a 400A pad oxide.
19... Diffusion Temperature=1060 Time=20 DryO2
20... Comment Deposit a 800A layer of silicon-nitride.
21... Deposit Nitride Thickness=.08
22... Comment Plot the chemical impurity distributions at this point.
23... Print Layer
24... Plot Chemical Boron Xmax=5 Clear ˆAxis Linetype=2
25... Plot Chemical Arsenic Xmax=5 ˆClear ˆAxis Linetype=4
26... Plot Chemical Antimony Xmax=5 ˆClear ˆAxis Linetype=5
27... Plot Chemical Net Xmax=5 ˆClear Axis Linetype=1
28... Comment Save the initial part of the isolation simulation.
29... Savefile Structure File=s3e2ds
30... Stop