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Suprem-III User´s Manual
layer material type thickness dx dxmin top bottom orientation
no.
(microns) (microns) node node or grain size
3 NITRIDE 0.0800 0.0100 0.0010 374 382
2 OXIDE 0.0415 0.0100 0.0010 383 384
1 SILICON 4.1525 0.0300 0.0010 385 500
Integrated Dopant
layer Net Total
no. active chemical active chemical
3 0.0000e+00 0.0000e+00 0.0000e+00 0.0000e+00
2 0.0000e+00 5.3688e+08 0.0000e+00 5.3688e+08
1 6.8806e+11 6.8806e+11 9.1451e+11 9.1451e+11
sum 6.8806e+11 6.8860e+11 9.1451e+11 9.1505e+11
Integrated Dopant
layer ARSENIC ANTIMONY
no. active chemical active chemical
3 0.0000e+00 0.0000e+00 0.0000e+00 0.0000e+00
2 0.0000e+00 5.3688e+08 0.0000e+00 0.0000e+00
1 8.0129e+11 8.0129e+11 1.9762e+01 1.9762e+01
sum 8.0129e+11 8.0182e+11 1.9762e+01 1.9762e+01
Integrated Dopant
layer BORON
no. active chemical
3 0.0000e+00 0.0000e+00
2 0.0000e+00 6.1677e+00
1 1.1323e+11 1.1323e+11
sum 1.1323e+11 1.1323e+11
Junction Depths and Integrated Dopant
Concentrations for Each Diffused Region
layer region type junction depth net total
no. no. (microns) active Qd chemical Qd
3 1 n 0.0000 0.0000e+00 0.0000e+00
2 1 n 0.0000 0.0000e+00 5.3688e+08
1 2 n 0.0000 7.9334e+11 8.0685e+11
1 1 p 1.7303 1.0504e+11 1.0587e+11
Save the initial part of the isolation simulation.
End Suprem-III