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Suprem-III User´s Manual
ELECT.ST Num The electric stopping power of the impurity in the specified material.
(unit: KeV/micron.)
(default: the current value.)
(synonym: )
ENTROPY Num The entropy factor. Used to calculate the equilibrium segregation factor
at polysilicon grain boundaries.
(unit: )
(default: the current value.)
(synonym: )
FII.0 Num The pre-exponential constant of the fractional partial-interstitialcy contribution.
(unit: (microns/minute)ˆ(-1/2))
(default: the current value.)
(synonym: )
FII.E Num The activation energy of the fractional partial-interstitialcy contribution.
(unit: electron volts.)
(default: the current value.)
(synonym: )
HEAT.SEG Num The activation energy of the equilibrium segregation factor at polysilicon
grain boundaries.
(unit: electron volts.)
(default: the current value.)
(synonym: )
IMPLANT Log Specifies that the impurity clustering coefficients apply to the impurity
from an implanted source.
(unit: )
(default: false.)
(synonym: )
IONFILE1 Char Specifies the primary ion implant range data file for implants using the
analytic distrbutions. This file will be searched for the range statistics
when implanting atomic arsenic.
(unit: )
(default: the last file specified.)
(synonym: )
IONFILE2 Char Specifies the secondary ion implant range data file for implants using the
analytic distributions. This file will be searched for the range statistics
when implanting the compound ions containing arsenic.
(unit: )
(default: the last file specified.)
(synonym: )
K.A Num Used in R. Reif’s epitaxial doping model (see reference in EPITAXY
statement). K.a is a thermodynamic constant relating the dopant
species concentration in solid silicon and adsorbed layer.
(unit: centimeters)
(default: the current value.)
(synonym: )