Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
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<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />
21. Epitaxy Statement<br />
---------------------------<br />
The EPITAXY statement simulates the epitaxial growth of silicon layers.<br />
EPITAXY<br />
TEMPERAT= TIME= [ DX= ]<br />
( GRO WTH.R= | PP.SILAN= )<br />
[ ( ANTIMONY | ARSENIC | BORON | PHOSPHOR )<br />
( CONCENTR= | PP.DOPAN= )<br />
[ DTMIN= ] [ DTMAX= ]<br />
[ ABS.ERR= ] [ REL.ERR= ]<br />
Name Type Description<br />
---- ---- -----------<br />
ABS.ERR Num Specifies the maximum desired absolute truncation error. Used to control<br />
the time step as described below.<br />
(unit: centimetersˆ(-3))<br />
(default: 1.0E14)<br />
(synonym: )<br />
ANTIMONY Log Specifies that the impurity in the ambient gas is antimony.<br />
(unit: )<br />
(default: false.)<br />
(synonym: SB)<br />
ARSENIC Log Specifies that the impurity in the ambient gas is arsenic.<br />
(unit: )<br />
(default: false.)<br />
(synonym: AS)<br />
BORON Log Specifies that the impurity in the ambient gas is boron.<br />
(unit: )<br />
(default: false.)<br />
(synonym: )<br />
CONCENTR Num The concentration of the specified impurity in the ambient gas at the surface<br />
of the structure.<br />
(unit: atoms/cmˆ3.)<br />
(default: 0.0)<br />
(synonym: GAS.CONC)<br />
DX Num Specifies a width of the grid spaces used in the epi-layer grown.<br />
(unit: microns)<br />
(default: the current nominal dx for this layer)<br />
(synonym: )<br />
DTMAX Num The largest time increment to be used during the solution.<br />
(unit: minutes.)<br />
(default: 5.0)<br />
(synonym: )
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