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Suprem-III User´s Manual
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*** Suprem-III ***
*** version 1B rev. 8628 ***
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Tue Oct 27 15:51:52 1987
Commands input from file: s3ex1b.in
1... Title SUPREM-III Example 1. NMOS Silicon Gate
2... Comment Gate region.
3... $ File s3ex1b
4... Comment Initialize silicon substrate.
5... Initialize Structure=s3e1as
6... Comment Implant Arsenic for source/drain regions.
7... Implant Arsenic Dose=5E15 Energy=150
8... Comment Drive-in Arsenic and re-oxidize source/drain regions.
9... Diffusion Temperature=1000 Time=30 DryO2
10... Comment Etch contact holes to gate, source, and drain regions.
11... Etch Oxide
12... Comment Deposit Phosphorus doped SiO2 using CVD.
13... Deposit Oxide Thickness=.7500 Phosphorus Concentration=1.E21
14... Comment Increase the diffusivity of phosphorus in oxide by
15... $ two orders of magnitude.
16... Phosphorus Oxide Dix.0=4.56E7
17... Comment Reflow glass to smooth surface and dope contact holes.
18... Diffusion Temperature=1000 Time=30
19... Comment Reopen contact holes.
20... Etch Oxide
21... Comment Deposit Aluminum.
22... Deposit Aluminum Thickness=1.2 Spaces=10
23... Comment Plot the chemical impurity distributions at this point.
24... Print Layer
25... Plot Chemical Boron Xmax=2.5 Clear ˆAxis Linetype=2
26... Plot Chemical Arsenic Xmax=2.5 ˆClear ˆAxis Linetype=3
27... Plot Chemical Phosphorus Xmax=2.5 ˆClear ˆAxis Linetype=6
28... Plot Chemical Net Xmax=2.5 ˆClear Axis
29... Comment Save the structure.
30... Save Structure File=s3e1bs
31... Stop End of SUPREM-III Example 1.