Suprem III - Stanford Technology CAD Home Page

-168-
Suprem-III User´s Manual
Error number 210 detected in line number 23
The material to be etched did not match the top material.
No etching occured.
Deposit arsenic doped polysilicon for emitter contacts.
Anneal to activate base and drive-in emitter.
Plot the electrically Active impurity distributions.
layer material type thickness dx dxmin top bottom orientation
no.
(microns) (microns) node node or grain size
3 OXIDE 0.2924 0.0100 0.0010 214 228
2 POLYSILICON 0.3714 0.0100 0.0010 229 266 0.5465
1 SILICON 6.1265 0.0100 0.0010 267 500
Integrated Dopant
layer Net Total
no. active chemical active chemical
3 0.0000e+00 5.0738e+14 0.0000e+00 5.0772e+14
2 3.8821e+15 3.9912e+15 3.8948e+15 4.0039e+15
1 8.7747e+14 8.8244e+14 1.0649e+15 1.0699e+15
sum 4.7596e+15 5.3811e+15 4.9597e+15 5.5815e+15
Integrated Dopant
layer ARSENIC ANTIMONY
no. active chemical active chemical
3 0.0000e+00 5.0755e+14 0.0000e+00 1.6316e+03
2 3.8884e+15 3.9976e+15 4.3948e+04 4.3948e+04
1 4.8182e+14 4.8680e+14 4.8936e+14 4.8936e+14
sum 4.3703e+15 4.9919e+15 4.8936e+14 4.8936e+14
Integrated Dopant
layer BORON
no. active chemical
3 0.0000e+00 1.7080e+11
2 6.3257e+12 6.3257e+12
1 9.3716e+13 9.3716e+13
sum 1.0004e+14 1.0021e+14
Junction Depths and Integrated Dopant
Concentrations for Each Diffused Region
layer region type junction depth net total
no. no. (microns) active Qd chemical Qd
3 1 n 0.0000 0.0000e+00 5.0772e+14
2 1 n 0.0000 3.8821e+15 4.0039e+15
1 4 n 0.0000 4.6016e+14 5.0284e+14
1 3 p 0.1051 7.1342e+13 7.2380e+13
1 2 n 0.4744 4.8978e+14 4.9003e+14
1 1 p 4.3076 8.3108e+10 9.4636e+10
Save the resulting active region.
End Suprem-III