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Suprem-III User´s Manual
46. V.Threshold Statement
--------------------------------
The V.THRESHOLD statement is used to calculate and print out the threshold voltage as a function of
substrate bias for the current structure.
V.THRESHOLD
[ V.SUB1= ] [ V.SUB2= ] [ DV.SUB= ]
[ (SURFACE | BACKSIDE | (BULKCONC= (PTYPE | NTYPE))) ]
[ Q.F= ] [ TEMPERAT= ]
[ FILENAME= [ APPEND ] ]
Name Type Description
---- ---- -----------
APPEND log Specifies that the threshold voltage data is to be appended to the specified
file. Otherwise the data will appear at the beginning of the file, deleting
the previous contents of the file, if any.
(unit: )
(default: false.)
(synonym: )
BACKSIDE log Specifies that the substrate bias contact is at the backside of the wafer.
This causes the concentration at the last or bottommost point in the current
structure to be used as the concentration at the point of contact.
(unit: )
(default: true)
(synonym: )
BULKCONC Num Specifies the net active impurity concentration at the substrate bias contact.
(unit: atoms/centimeterˆ3)
(default: )
(synonym: )
DV.SUB Num The incremental substrate bias voltage. The threshold and punchthrough
calculations will be done at substrate bias voltages from V.SUB1 to
V.SUB2 in DV.SUB steps. At most 20 steps will be attempted.
(unit: volts)
(default: 0.5)
(synonym: )
FILENAME Char Specifies the name of a file in which the calculated threshold and
punchthrough voltages as a function of substrate bias are to be output.
If no file is specified the data is output to the standard output.
(unit: )
(default: )
(synonym: )
NTYPE log Specifies that the majority impurity type at the bulk contact is n-type.
Used only in conjunction with the BULKCONC parameter.
(unit: )
(default: false.)
(synonym: N-TYPE)