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Suprem-III User´s Manual
Suprem-III Example 2. Bipolar Poly doped emitter.
Initial active region formation.
File s3ex2a
Comment Initialize the silicon substrate.
Grow masking oxide for non-active regions.
Etch the oxide over the buried layer regions.
Implant and drive-in the antimony buried layer.
layer material type thickness dx dxmin top bottom orientation
no.
(microns) (microns) node node or grain size
2 OXIDE 0.0694 0.0100 0.0010 422 424
1 SILICON 4.5443 0.0100 0.0010 425 500
Integrated Dopant
layer Net Total
no. active chemical active chemical
2 0.0000e+00 7.8487e+11 0.0000e+00 7.9134e+11
1 4.9032e+14 4.9032e+14 4.9074e+14 4.9074e+14
sum 4.9032e+14 4.9110e+14 4.9074e+14 4.9153e+14
Integrated Dopant
layer BORON ANTIMONY
no. active chemical active chemical
2 0.0000e+00 3.2381e+09 0.0000e+00 7.8810e+11
1 2.1107e+11 2.1107e+11 4.9053e+14 4.9053e+14
sum 2.1107e+11 2.1430e+11 4.9053e+14 4.9131e+14
Junction Depths and Integrated Dopant
Concentrations for Each Diffused Region
layer region type junction depth net total
no. no. (microns) active Qd chemical Qd
2 1 n 0.0000 0.0000e+00 7.9134e+11
1 2 n 0.0000 4.9041e+14 4.9062e+14
1 1 p 2.4736 9.6534e+10 1.0662e+11
Etch off the oxide.
Grow 1.6 micron of arsenic doped epi.
Grow a 400A pad oxide.
Deposit nitride to mask the field oxidation.
Plot the chemical impurity distributions at this point.