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-173- Suprem-III User´s Manual Plot of base region sheet resistance vs. collector base voltage based upon a Suprem-III Poisson solution through the active device region.
-174- Suprem-III User´s Manual ********************************* *** Suprem-III *** *** version 1B rev. 8628 *** ********************************* Tue Oct 27 16:36:45 1987 Commands input from file: s3ex2d.in 1... Title Suprem-III Example 2. Bipolar Poly Doped Emitter 2... $ Initial isolation region formation. 3... $ File s3ex2d. 4... Comment Initialize the silicon substrate. 5... Initialize Silicon, Boron Concentration=5E14 ... + Thickness=3 dX=.03 Spaces=75 6... Comment Grow masking oxide for the non-active regions. 7... Diffusion Temperature=1150 Time=100 WetO2 8... Comment Implant and drive in the antimony buried layer. 9... Implant Antimony Dose=1E15 Energy=80 10... Diffusion Temperature=1150 Time=15 DryO2 11... Diffusion Temperature=1150 Time=300 12... Print Layer 13... Plot Net Chemical Xmax=4.5 14... Comment Etch off the oxide. 15... Etch Oxide 16... Comment Add 1.6 microns of arsenic doped epi. 17... Epitaxy Temperature=1050 Time=4 Growth.Rate=.4 ... + Arsenic Gas.Conc=5E15 18... Comment Grow a 400A pad oxide. 19... Diffusion Temperature=1060 Time=20 DryO2 20... Comment Deposit a 800A layer of silicon-nitride. 21... Deposit Nitride Thickness=.08 22... Comment Plot the chemical impurity distributions at this point. 23... Print Layer 24... Plot Chemical Boron Xmax=5 Clear Âxis Linetype=2 25... Plot Chemical Arsenic Xmax=5 ˆClear Âxis Linetype=4 26... Plot Chemical Antimony Xmax=5 ˆClear Âxis Linetype=5 27... Plot Chemical Net Xmax=5 ˆClear Axis Linetype=1 28... Comment Save the initial part of the isolation simulation. 29... Savefile Structure File=s3e2ds 30... Stop
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