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Suprem III - Stanford Technology CAD Home Page

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-137-<br />

<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />

<strong>Suprem</strong>-<strong>III</strong> simulation after the channel implant, gate oxide growth,<br />

poly deposition and doping. Phosphorus diffusion from the poly gate<br />

into the gate oxide is evident.

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