Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
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<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />
layer material type thickness dx dxmin top bottom orientation<br />
no.<br />
(microns) (microns) node node or grain size<br />
2 ALUMINUM 1.2000 0.0100 0.0010 352 362<br />
1 SILICON 1.4282 0.0050 0.0010 363 500 <br />
Integrated Dopant<br />
layer Net Total<br />
no. active chemical active chemical<br />
2 0.0000e+00 0.0000e+00 0.0000e+00 0.0000e+00<br />
1 5.4178e+15 5.5214e+15 5.4184e+15 5.5221e+15<br />
sum 5.4178e+15 5.5214e+15 5.4184e+15 5.5221e+15<br />
Integrated Dopant<br />
layer PHOSPHORUS ARSENIC<br />
no. active chemical active chemical<br />
2 0.0000e+00 0.0000e+00 0.0000e+00 0.0000e+00<br />
1 6.2501e+14 6.7332e+14 4.7931e+15 4.8484e+15<br />
sum 6.2501e+14 6.7332e+14 4.7931e+15 4.8484e+15<br />
Integrated Dopant<br />
layer BORON<br />
no. active chemical<br />
2 0.0000e+00 0.0000e+00<br />
1 3.2537e+11 3.2537e+11<br />
sum 3.2537e+11 3.2537e+11<br />
Junction Depths and Integrated Dopant<br />
Concentrations for Each Diffused Region<br />
layer region type junction depth net total<br />
no. no. (microns) active Qd chemical Qd<br />
2 1 n 0.0000 0.0000e+00 0.0000e+00<br />
1 2 n 0.0000 5.4178e+15 5.5220e+15<br />
1 1 p 1.2072 1.8688e+10 3.0137e+10<br />
Save the structure.<br />
End <strong>Suprem</strong>-<strong>III</strong>
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