Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
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<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />
NE.0 Num The pre-exponential constant for Ne, the concentration at which the<br />
P+V= pairs disassociate. Used to calculate the diffusivity of phosphorus<br />
at high concentrations.<br />
(unit: atoms/cmˆ3.)<br />
(default: the current value.)<br />
(synonym: )<br />
NE.E Num The activation energy for calculating Ne, the concentration at which the<br />
P+V= pairs disassociate. Used to calculate the diffusivity of phosphorus<br />
at high concentrations.<br />
(unit: electron volts.)<br />
(default: the current value.)<br />
(synonym: )<br />
NITRIDE Log Specifies that the material dependent parameters apply to phosphorus in<br />
silicon nitride.<br />
(unit: )<br />
(default: false.)<br />
(synonym: )<br />
OXIDE Log Specifies that the material dependent parameters apply to phosphorus in<br />
silicon dioxide.<br />
(unit: )<br />
(default: false.)<br />
(synonym: )<br />
POLYSILI Log Specifies that the material dependent parameters apply to phosphorus in<br />
polysilicon.<br />
(unit: )<br />
(default: false.)<br />
(synonym: )<br />
Q.SITES Num Effective density of segregation sites at a grain boundary.<br />
(unit: sites/cmˆ2.)<br />
(default: the current value.)<br />
(synonym: )<br />
SILICON Log Specifies that the material dependent parameters apply to phosphorus in<br />
silicon.<br />
(unit: )<br />
(default: false.)<br />
(synonym: )<br />
The PHOSPHOR statement is an alias for the IMPURITY statement with an index of two and is used to<br />
define or modify the parameters and coefficients associated with phosphorus as an impurity. Not all of the parameters<br />
of the IMPURITY statement apply to phosphorus and so are not listed here.