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-18-
Suprem-III User´s Manual
13. Bias Statement
-----------------------
The BIAS statement is used to specify the bias of conductor and semiconductor layers during a Poisson
solution initiated by the ELECTRICAL statement.
BIAS
LAYER=
( [ V.ELECTR= ] [ DV.ELECTR= ] )
| ( ( [ DIFFUSIO= ]
[ V.MAJORI= ] [ DV.MAJOR= ]
[ V.MINORI= ] [ DV.MINOR= ]
)
| [ FLOAT ]
)
Name Type Description
---- ---- -----------
DIFFUSIO Num The index of the diffused region for which the quasi-Fermi potentials are
specified. The parameter is valid only for a semiconductor layer.
(unit: )
(default: All diffused regions in the layer.)
(synonym: )
LAYER Num The index of the conductor or semiconductor layer for which a bias is being
specified.
(unit: )
(default: )
(synonym: )
DV.ELECT Num The increment for the bias applied to a conductor layer. This parameter
is valid only for a conductor layer.
(unit: volts.)
(default: 0.0)
(synonym: )
DV.MAJOR Num The increment for the quasi-Fermi potential of majority carriers for a diffused
region of a semiconductor layer. This parameter is valid only for
a semiconductor layer.
(unit: volts.)
(default: 0.0)
(synonym: )
DV.MINOR Num The increment for the quasi-Fermi potential of minority carriers for a diffused
region of a semiconductor layer. This parameter is valid only for
a semiconductor layer.
(unit: volts.)
(default: 0.0)
(synonym: )
FLOAT Log Specifies that a polysilicon layer is to be treated as a neutral dielectric.
This parameter is valid only for a polysilicon layer.
(unit: )
(default: false.)