Suprem III - Stanford Technology CAD Home Page

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Suprem-III User´s Manual
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*** Suprem-III ***
*** version 1B rev. 8628 ***
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Tue Oct 27 16:24:46 1987
Commands input from file: s3ex2a.in
1... Title Suprem-III Example 2. Bipolar Poly doped emitter.
2... $ Initial active region formation.
3... $ File s3ex2a
4... $ Comment Initialize the silicon substrate.
5... Initialize Silicon, Boron Concentration=5e14
... + Thickness=5. dX=.01 XdX=.05 Spaces=100
6... Comment Grow masking oxide for non-active regions.
7... Diffusion Temperature=1150 Time=100 WetO2
8... Comment Etch the oxide over the buried layer regions.
9... Etch Oxide
10... Comment Implant and drive-in the antimony buried layer.
11... Implant Antimony Dose=5E14 Energy=120
12... Diffusion Temperature=1150 Time=15 DryO2
13... Diffusion Temperature=1150 Time=300
14... Print Layer
15... Plot Net Chemical Xmax=5
16... Comment Etch off the oxide.
17... Etch Oxide
18... Comment Grow 1.6 micron of arsenic doped epi.
19... Epitaxy Temperature=1050 Time=4 Growth.Rate=.4
... + Arsenic Gas.Conc=5E15
20... Comment Grow a 400A pad oxide.
21... Diffusion Temperature=1060 Time=20 DryO2
22... Comment Deposit nitride to mask the field oxidation.
23... Deposit Nitride Thickness=.08
24... Comment Plot the chemical impurity distributions at this point.
25... Print Layer
26... Plot Chemical Boron Xmax=5 Clear ˆAxis Linetype=2
27... Plot Chemical Arsenic Xmax=5 ˆClear ˆAxis Linetype=4
28... Plot Chemical Antimony Xmax=5 ˆClear ˆAxis Linetype=5
29... Plot Chemical Net Xmax=5 ˆClear Axis Linetype=1
30... Comment Save the simulation structure at this point for use in
31... $ subsequent processing.
32... Savefile Structure File=s3e2as
33... Stop