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Suprem III - Stanford Technology CAD Home Page

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-43-<br />

<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />

23. Grid Statement<br />

-----------------------<br />

The GRID statement specifies the grid spacing parameters for one or more of the layers in a structure. For<br />

the first layer, the thickness may also be extended.<br />

GRID<br />

LAYER. [ THICKNES= ] [ DX= ] [ MIN.DX= ]<br />

[ XDX= ] [ SPA CES= ]<br />

Name Type Description<br />

---- ---- -----------<br />

DX Num The nominal grid spacing in to be used in the specified layer(s) at the location<br />

associated with the XDX parameter.<br />

(unit: microns.)<br />

(default: The current nominal grid spacing.)<br />

(synonym: )<br />

LAYER. Log Specifies that the grid parameters are to apply to the n’th layer of the<br />

structure.<br />

(unit: )<br />

(default: false.)<br />

(synonym: )<br />

MIN.DX Num The minimum grid spacing that can be used in the specified layer(s).<br />

(unit: microns.)<br />

(default: The current minimum grid spacing.)<br />

(synonym: )<br />

SPACES Num The number of spaces to be used in the specified layer(s).<br />

(unit: )<br />

(default: The current number of spaces in the layer.)<br />

(synonym: )<br />

THICKNESS Num The thickness of the first layer. If the specified thickness is greater than<br />

the current layer thickness, then additional material is added to the bottom<br />

of the layer. The value specified must be greater than or equal to<br />

the current thickness.<br />

(unit: microns.)<br />

(default: The current layer thickness.)<br />

(synonym: )<br />

XDX Num The distance from the surface of the layer at which the nominal grid<br />

spacing, DX, applies.<br />

(unit: microns.)<br />

(default: The last value specified.)<br />

(synonym: )<br />

The GRID statement is used primarily to change the grid spacing of one or more layers of the current<br />

structure. In the case of the first, or bottom layer, the GRID statement may be used to extend the depth of the layer<br />

by adding additional material to the bottom of the structure. In this case, the impurity concentration at the bottommost<br />

cell in the structure is used uniformly in the added region.

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