Suprem III - Stanford Technology CAD Home Page

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Suprem-III User´s Manual
layer material type thickness dx dxmin top bottom orientation
no.
(microns) (microns) node node or grain size
3 POLYSILICON 0.5000 0.0100 0.0010 300 350 0.6105
2 OXIDE 0.0672 0.0100 0.0010 351 358
1 SILICON 1.4539 0.0050 0.0010 359 500
Integrated Dopant
layer Net Total
no. active chemical active chemical
3 9.6442e+15 1.6986e+16 9.6442e+15 1.6986e+16
2 0.0000e+00 5.3176e+12 0.0000e+00 5.5242e+12
1 -4.3757e+11 -4.3757e+11 4.3757e+11 4.3757e+11
sum 9.6437e+15 1.6991e+16 9.6446e+15 1.6992e+16
Integrated Dopant
layer BORON PHOSPHORUS
no. active chemical active chemical
3 1.0440e+08 1.0440e+08 9.6442e+15 1.6986e+16
2 0.0000e+00 1.0328e+11 0.0000e+00 5.4209e+12
1 4.3757e+11 4.3757e+11 5.9474e+03 5.9474e+03
sum 4.3767e+11 5.4096e+11 9.6442e+15 1.6991e+16
Junction Depths and Integrated Dopant
Concentrations for Each Diffused Region
layer region type junction depth net total
no. no. (microns) active Qd chemical Qd
3 1 n 0.0000 9.6442e+15 1.6986e+16
2 2 n 0.0000 0.0000e+00 5.2968e+12
2 1 p 0.0242 0.0000e+00 8.0323e+10
1 1 p 0.0000 4.3757e+11 4.3757e+11
Save the structure at this point. The simulation runs
are split for the gate and source/drain regions.
End Suprem-III