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Suprem-III User´s Manual
SUPREM-III Example 1. NMOS Silicon Gate
Gate region.
File s3ex1b
Initialize silicon substrate.
Implant Arsenic for source/drain regions.
Drive-in Arsenic and re-oxidize source/drain regions.
Etch contact holes to gate, source, and drain regions.
Deposit Phosphorus doped SiO2 using CVD.
Increase the diffusivity of phosphorus in oxide by
two orders of magnitude.
Reflow glass to smooth surface and dope contact holes.
Reopen contact holes.
Deposit Aluminum.
Plot the chemical impurity distributions at this point.