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-169- Suprem-III User´s Manual Suprem-III simulation of the active device region following field oxidation. The Si3N4 has masked the oxidation in this region, although it has been partially oxidized itself. The Antimony buried layer has diffused upward during the local oxidation process.
-170- Suprem-III User´s Manual Suprem-III simulation of the active device region following all processing steps. The original N epi layer has almost disappeared because of buried layer and base diffusion
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