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Suprem-III User´s Manual
DIMM.E Num The activation energy of the diffusion coefficient of the impurity diffusing
with doubly negative vacancies.
(unit: electron volts.)
(default: the current value.)
(synonym: )
DIP.0 Num The pre-exponential constant of the diffusion coefficient of the impurity
diffusing with positive vacancies.
(unit: micronsˆ2/minute.)
(default: the current value.)
(synonym: )
DIP.E Num The activation energy of the diffusion coefficient of the impurity diffusing
with positive vacancies.
(unit: electron volts.)
(default: the current value.)
(synonym: )
DIX.0 Num The pre-exponential constant of the diffusion coefficient of the impurity
diffusing with neutral vacancies.
(unit: micronsˆ2/minute.)
(default: the current value.)
(synonym: )
DIX.E Num The activation energy of the diffusion coefficient of the impurity diffusing
with neutral vacancies.
(unit: electron volts.)
(default: the current value.)
(synonym: )
DONOR Log Specifies that the impurity is a donor in silicon.
(unit: )
(default: the current value.)
(synonym: )
ELECT.ST Num The electric stopping power of the impurity in the specified material.
(unit: KeV/micron.)
(default: the current value.)
(synonym: )
ENTROPY Num The entropy factor. Used to calculate the equilibrium segregation factor
at polysilicon grain boundaries.
(unit: )
(default: the current value.)
(synonym: )
FII.0 Num The pre-exponential constant of the fractional partial-interstitialcy contribution.
(unit: (microns/minute)ˆ(-1/2))
(default: the current value.)
(synonym: )
FII.E Num The activation energy of the fractional partial-interstitialcy contribution.
(unit: electron volts.)
(default: the current value.)
(synonym: )