01.01.2015 Views

Suprem III - Stanford Technology CAD Home Page

Suprem III - Stanford Technology CAD Home Page

Suprem III - Stanford Technology CAD Home Page

SHOW MORE
SHOW LESS

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

-78-<br />

<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />

(synonym: )<br />

DIX.0 Num The pre-exponential constant of the diffusion coefficient of the impurity<br />

diffusing with neutral vacancies.<br />

(unit: micronsˆ2/minute.)<br />

(default: the current value.)<br />

(synonym: )<br />

DIX.E Num The activation energy of the diffusion coefficient of the impurity diffusing<br />

with neutral vacancies.<br />

(unit: electron volts.)<br />

(default: the current value.)<br />

(synonym: )<br />

DONOR Log Specifies that the impurity is a donor in silicon.<br />

(unit: )<br />

(default: the current value.)<br />

(synonym: )<br />

ELECT.ST Num The electric stopping power of the impurity in the specified material.<br />

(unit: KeV/micron.)<br />

(default: the current value.)<br />

(synonym: )<br />

ENTROPY Num The entropy factor. Used to calculate the equilibrium segregation factor<br />

at polysilicon grain boundaries.<br />

(unit: )<br />

(default: the current value.)<br />

(synonym: )<br />

FII.0 Num The pre-exponential constant of the fractional partial-interstitialcy contribution.<br />

(unit: (microns/minute)ˆ(-1/2))<br />

(default: the current value.)<br />

(synonym: )<br />

FII.E Num The activation energy of the fractional partial-interstitialcy contribution.<br />

(unit: electron volts.)<br />

(default: the current value.)<br />

(synonym: )<br />

HEAT.SEG Num The activation energy of the equilibrium segregation factor at polysilicon<br />

grain boundaries.<br />

(unit: electron volts.)<br />

(default: the current value.)<br />

(synonym: )<br />

IMPLANT Log Specifies that the impurity clustering coefficients apply to the impurity<br />

from an implanted source.<br />

(unit: )<br />

(default: false.)<br />

(synonym: )<br />

IONFILE1 Char Specifies the primary ion implant range data file for implants using the<br />

analytic distributions. This file will be searched for the range statistics<br />

when implanting atomic phosphorus.<br />

(unit: )<br />

(default: the last file specified.)<br />

(synonym: )

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!