Suprem III - Stanford Technology CAD Home Page

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Suprem-III User´s Manual
layer material type thickness dx dxmin top bottom orientation
no.
(microns) (microns) node node or grain size
3 NITRIDE 0.0800 0.0100 0.0010 254 262
2 OXIDE 0.0406 0.0100 0.0010 263 266
1 SILICON 6.1265 0.0100 0.0010 267 500
Integrated Dopant
layer Net Total
no. active chemical active chemical
3 0.0000e+00 0.0000e+00 0.0000e+00 0.0000e+00
2 0.0000e+00 2.4201e+09 0.0000e+00 2.4201e+09
1 4.8995e+14 4.8995e+14 4.9037e+14 4.9037e+14
sum 4.8995e+14 4.8995e+14 4.9037e+14 4.9037e+14
Integrated Dopant
layer ARSENIC ANTIMONY
no. active chemical active chemical
3 0.0000e+00 0.0000e+00 0.0000e+00 0.0000e+00
2 0.0000e+00 2.4201e+09 0.0000e+00 0.0000e+00
1 7.9866e+11 7.9866e+11 4.8936e+14 4.8936e+14
sum 7.9866e+11 8.0108e+11 4.8936e+14 4.8936e+14
Integrated Dopant
layer BORON
no. active chemical
3 0.0000e+00 0.0000e+00
2 0.0000e+00 7.3250e-01
1 2.1099e+11 2.1099e+11
sum 2.1099e+11 2.1099e+11
Junction Depths and Integrated Dopant
Concentrations for Each Diffused Region
layer region type junction depth net total
no. no. (microns) active Qd chemical Qd
3 1 n 0.0000 0.0000e+00 0.0000e+00
2 1 n 0.0000 0.0000e+00 2.4201e+09
1 2 n 0.0000 4.9004e+14 4.9025e+14
1 1 p 4.0558 9.6256e+10 1.0673e+11
Save the simulation structure at this point for use in
subsequent processing.
End Suprem-III