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Suprem-III User´s Manual
Suprem-III Example 2. Bipolar Poly doped emitter.
Final isolation region formation.
File s3ex2e.
Start with the result of S3EX2D.
Etch the nitride and oxide layers.
Etch half the silicon epi layer.
Implant boron in the field region.
Grow the field oxide.
layer material type thickness dx dxmin top bottom orientation
no.
(microns) (microns) node node or grain size
2 OXIDE 1.2354 0.0100 0.0010 407 424
1 SILICON 4.6564 0.0300 0.0010 425 500
Integrated Dopant
layer Net Total
no. active chemical active chemical
2 0.0000e+00 -1.3720e+13 0.0000e+00 1.3992e+13
1 -4.8603e+12 -4.8603e+12 5.3040e+12 5.3040e+12
sum -4.8603e+12 -1.8580e+13 5.3040e+12 1.9296e+13
Integrated Dopant
layer ARSENIC ANTIMONY
no. active chemical active chemical
2 0.0000e+00 1.3628e+11 0.0000e+00 3.3793e-01
1 2.2189e+11 2.2189e+11 1.9424e+01 1.9424e+01
sum 2.2189e+11 3.5816e+11 1.9424e+01 1.9762e+01
Integrated Dopant
layer BORON
no. active chemical
2 0.0000e+00 1.3856e+13
1 5.0822e+12 5.0822e+12
sum 5.0822e+12 1.8938e+13
Junction Depths and Integrated Dopant
Concentrations for Each Diffused Region
layer region type junction depth net total
no. no. (microns) active Qd chemical Qd
2 1 p 0.0000 0.0000e+00 1.3992e+13
1 2 n 0.0000 5.9448e+09 5.1887e+10
1 1 p 0.0404 4.8305e+12 5.2176e+12
Implant the boron base.
Deposit arsenic doped polysilicon for the emitter contact.
Remove the polysilicon.
Anneal to activate base and emitter regions.
Plot the electrically active impurity distributions.