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Suprem III - Stanford Technology CAD Home Page

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-105-<br />

<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />

DENSITY Num The density of the material.<br />

(unit: grams/cmˆ3.)<br />

(default: the current value.)<br />

(synonym: )<br />

DX.DEFAU Num The default nominal grid spacing for any layer containing this material.<br />

(unit: microns.)<br />

(default: the current value.)<br />

(synonym: )<br />

EPSILONF Num The dielectric constant of the material relative the dielectric constant of<br />

air.<br />

(unit: )<br />

(default: the current value.)<br />

(synonym: )<br />

K.M Num Used in R. Reif’s epitaxial growth model (see reference in EPITAXY<br />

statement). K.m is the mass transport coefficient for silane in hydrogen.<br />

(unit: microns/minute/atmosphere)<br />

(default: the current value)<br />

(synonym: )<br />

NAME Char The name of the material.<br />

(unit: )<br />

(default: the current name of the material.)<br />

(synonym: )<br />

NI.0 Num The pre-factor used in the calculation of the intrinsic carrier concentration.<br />

(unit: (carriers/cmˆ3)(degrees Kelvin)ˆ(3/2).)<br />

(default: the current value.)<br />

(synonym: )<br />

NI.E Num The activation energy used in the calculation of the intrinsic carrier concentration.<br />

(unit: electron volts.)<br />

(default: the current value.)<br />

(synonym: )<br />

NI.F Num The exponent to the absolute temperature used in the calculation of the<br />

intrinsic carrier concentration.<br />

(unit: )<br />

(default: the current value.)<br />

(synonym: )<br />

N.CONDUC Num The carrier concentration in the conduction band of the material.<br />

(unit: carriers/cmˆ3.)<br />

(default: the current value.)<br />

(synonym: )<br />

N.VALENC Num The carrier concentration in the valence band of the material.<br />

(unit: carriers/cmˆ3.)<br />

(default: the current value.)<br />

(synonym: )

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