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Suprem-III User´s Manual
GAS.CONC Num The concentration of the specified impurity in the ambient gas at the surface
of the structure.
(unit: atoms/cmˆ3.)
(default: 0.0)
(synonym: CONCENTRATION)
HCL% Num The percentage of chlorine present in the ambient gas.
(unit: percent)
(default: percentage specified in corresponding ambient statement
(DryO2, WetO2, Nitrogen))
(synonym: )
NITROGEN Log Specifies that the ambient consists of nitrogen (non-oxidizing ambient).
(unit: )
(default: true.)
(synonym: )
P.RATE Num The rate of change in the ambient gas pressure.
(unit: atmospheres/minute.)
(default: 0.0)
(synonym: )
PHOSPHOR Log Specifies that the impurity in the ambient gas is phosphorus.
(unit: false.)
(default: )
(synonym: )
PRESSURE Num The pressure of the ambient gas. (See note below.)
(unit: atmospheres.)
(default: pressure specified in corresponding ambient statement
(DryO2, WetO2, Nitrogen))
(synonym: )
REL.ERR Num Specifies the maximum desired relative truncation error. Used to control
the time step as described below.
(unit: )
(default: 0.5)
(synonym: )
SOLIDSOL Log Sets the concentration of the specified impurity in the ambient gas at the
surface of the structure to the solid solubility of the impurity in silicon.
(unit: )
(default: false.)
(synonym: )
TIME Num The total elapsed time of the diffusion step being simulated.
(unit: minutes.)
(default: )
(synonym: )
TEMPERAT Num The temperature of the ambient at the beginning of the step.
(unit: degrees Centigrade.)
(default: )
(synonym: )
T.RATE Num The rate of change of the ambient temperature.
(unit: degrees Centigrade/minute.)
(default: 0.0)
(synonym: )