Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
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<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />
RATIO.E Num The activation energy used to calculate the ratio of the silicon self-diffusivities<br />
in the grain and in the bulk. Actually the difference between<br />
the activation energies of the two self-diffusivities<br />
(unit: electron volts.)<br />
(default: the current value.)<br />
(synonym: )<br />
SEMICOND Log Specifies that the material is a semiconductor.<br />
(unit: )<br />
(default: false.)<br />
(synonym: )<br />
SPECIES Num The number of different elements in this material.<br />
(unit: )<br />
(default: the current value.)<br />
(synonym: )<br />
TA U.0 Num The pre-exponential constant used to calculate the time dependence of<br />
the grain interior concentration.<br />
(unit: minutes.)<br />
(default: the current value.)<br />
(synonym: )<br />
TA U.E Num The activation energy used to calculate the time dependence of the grain<br />
interior concentration.<br />
(unit: electron volts.)<br />
(default: the current value.)<br />
(synonym: )<br />
TEMP.BRE Num For LPCVD the temperature below which the deposited polysilicon becomes<br />
amorphous.<br />
(unit: degrees Centigrade.)<br />
(default: the current value.)<br />
(synonym: )<br />
The POLYSILI statement is an alias for the MATERIAL statement with an index of three and is used to<br />
define or modify the parameters and coefficients associated with the material polysilicon. Not all of the parameters<br />
of the MATERIAL statement apply to polysilicon and so are not listed here.
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