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-165- Suprem-III User´s Manual Suprem-III simulation of the active device region after drive-in of the buried layer, epi growth, and oxide/nitride deposition.
-166- Suprem-III User´s Manual ********************************* *** Suprem-III *** *** version 1B rev. 8628 *** ********************************* Tue Oct 27 16:31:39 1987 Commands input from file: s3ex2b.in 1... Title Suprem-III Example 2. Bipolar Poly doped emitter. 2... $ Final active device region formation. 3... $ File s3ex2b 4... Comment Start from the result of s3ex2a. 5... Initialize Structure=s3e2as 6... Comment Field oxide growth. Oxidation is masked by nitride. 7... Diffusion Temperature=800 Time=30 t.rate=10 8... Diffusion Temperature=1000 Time=15 DryO2 9... Diffusion Temperature=1100 Time=210 WetO2 10... Diffusion Temperature=1100 Time=15 DryO2 11... Diffusion Temperature=1100 Time=10 t.rate=-30 12... Print Layer 13... Plot Net Chemical Xmax=5 14... Comment Etch the oxide and nitride layers. 15... Etch Oxide 16... Etch Nitride 17... Etch Oxide 18... Comment Move the fine grid to the surface. 19... Grid Layer.1 Xdx=0. 20... Comment Implant the boron base. 21... Implant Boron Dose=1E14 Energy=50 22... Comment Remove oxide from emitter region. 23... Etch Oxide 24... Comment Deposit arsenic doped polysilicon for emitter contacts. 25... Deposit Polysilicon, Thickness=.5 Temperature=620 ... + Arsenic Concentration=1e20 26... Comment Anneal to activate base and drive-in emitter. 27... Diffusion Temperature=1000 Time=20 WetO2 28... Comment Plot the electrically Active impurity distributions. 29... Print Layer 30... Plot Active Boron Xmax=6 Clear Âxis Linetype=2 31... Plot Active Arsenic Xmax=6 ˆClear Âxis Linetype=4 32... Plot Active Antimony Xmax=6 ˆClear Âxis Linetype=5 33... Plot Active Net Xmax=6 ˆClear Axis Linetype=1 34... Comment Save the resulting active region. 35... Savefile Structure File=s3e2bs 36... Stop
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