Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
Suprem III - Stanford Technology CAD Home Page
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
-151-<br />
<strong>Suprem</strong>-<strong>III</strong> User´s Manual<br />
*********************************<br />
*** <strong>Suprem</strong>-<strong>III</strong> ***<br />
*** version 1B rev. 8628 ***<br />
*********************************<br />
Tue Oct 27 15:56:36 1987<br />
Commands input from file: s3ex1e.in<br />
1... Title SUPREM-<strong>III</strong> Example 1. NMOS Silicon Gate<br />
2... Comment Isolation region initial processing.<br />
3... $ File s3ex1e<br />
4... Comment Initialize silicon substrate.<br />
5... Initialize Silicon, Boron Concentration=1e15<br />
... + Thickness=3.0 dX=.01 Spaces=150<br />
6... Comment Grow pad oxide, 400A.<br />
7... Diffusion Temperature=1000 Time=40 DryO2<br />
8... Comment Implant boron to increase field region doping.<br />
9... Implant Boron dose=1e13 energy=150<br />
10... Comment Grow field oxide.<br />
11... Diffusion Temperature=1000 Time=180 WetO2<br />
12... Print Layer<br />
13... Comment Implant boron to shift the enhancement threshold voltage.<br />
14... Implant Boron Dose=4e11 Energy=50<br />
15... Comment Grow gate oxide<br />
16... Diffusion Temperature=1050 Time=30 DryO2 HCL%=3<br />
17... Comment Deposit polysilicon<br />
18... Deposit Polysilicon Thickness=0.5 Temperature=600<br />
19... Comment Heavily dope the polysilicon using POCl3<br />
20... Diffusion Temperature=1000 Time=25 dTmin=.3<br />
... + Phosphorus Solidsolubility<br />
21... Print Layer<br />
22... Plot Chemical Boron Clear ˆAxis Linetype=2<br />
23... Plot Chemical Phosphorus ˆClear ˆAxis Linetype=3<br />
24... Plot Chemical Net ˆClear Axis<br />
25... Comment Save the structure at this point.<br />
26... Save Structure File=s3e1es<br />
27... Stop End of SUPREM-<strong>III</strong> Example 1.
Change language