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Suprem-III User´s Manual
MSF110FA Num The orientation factor in orientation silicon for bandgap narrowing
due to lattice misfit strain from high concentrations of phosphorus.
(unit: )
(default: the current value.)
(synonym: )
MSF111FA Num The orientation factor in orientation silicon for bandgap narrowing
due to lattice misfit strain from high concentrations of phosphorus.
(unit: )
(default: the current value.)
(synonym: )
NAME Char The name of the impurity.
(unit: )
(default: the last name specified.)
(synonym: )
NE.0 Num The pre-exponential constant for Ne, the concentration at which the
P+V= pairs disassociate. Used to calculate the diffusivity of phosphorus
at high concentrations.
(unit: atoms/cmˆ3.)
(default: the current value.)
(synonym: )
NE.E Num The activation energy for calculating Ne, the concentration at which the
P+V= pairs disassociate. Used to calculate the diffusivity of phosphorus
at high concentrations.
(unit: electron volts.)
(default: the current value.)
(synonym: )
NITRIDE Log Specifies that the material dependent parameters apply to the impurity in
silicon nitride.
(unit: )
(default: false.)
(synonym: )
OXIDE Log Specifies that the material dependent parameters apply to the impurity in
silicon dioxide.
(unit: )
(default: false.)
(synonym: )
POLYSILI Log Specifies that the material dependent parameters apply to the impurity in
polysilicon.
(unit: )
(default: false.)
(synonym: )
Q.SITES Num Effective density of segregation sites at a grain boundary.
(unit: sites/cmˆ2.)
(default: the current value.)
(synonym: )
SILICON Log Specifies that the material dependent parameters apply to the impurity in
single crystal silicon.
(unit: )
(default: false.)
(synonym: )