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Suprem-III User´s Manual
Suprem-III Example 2. Bipolar Poly doped emitter.
Final active device region formation.
File s3ex2b
Start from the result of s3ex2a.
Field oxide growth. Oxidation is masked by nitride.
layer material type thickness dx dxmin top bottom orientation
no.
(microns) (microns) node node or grain size
4 OXIDE 0.0694 0.0100 0.0010 252 257
3 NITRIDE 0.0380 0.0100 0.0010 258 262
2 OXIDE 0.0406 0.0100 0.0010 263 266
1 SILICON 6.1265 0.0100 0.0010 267 500
Integrated Dopant
layer Net Total
no. active chemical active chemical
4 0.0000e+00 0.0000e+00 0.0000e+00 0.0000e+00
3 0.0000e+00 1.1100e+07 0.0000e+00 1.1104e+07
2 0.0000e+00 2.3360e+09 0.0000e+00 2.3824e+09
1 4.8995e+14 4.8995e+14 4.9037e+14 4.9037e+14
sum 4.8995e+14 4.8995e+14 4.9037e+14 4.9037e+14
Integrated Dopant
layer ARSENIC ANTIMONY
no. active chemical active chemical
4 0.0000e+00 0.0000e+00 0.0000e+00 0.0000e+00
3 0.0000e+00 1.1102e+07 0.0000e+00 1.7540e-02
2 0.0000e+00 2.3592e+09 0.0000e+00 2.9405e+02
1 7.9871e+11 7.9871e+11 4.8936e+14 4.8936e+14
sum 7.9871e+11 8.0108e+11 4.8936e+14 4.8936e+14
Integrated Dopant
layer BORON
no. active chemical
4 0.0000e+00 0.0000e+00
3 0.0000e+00 1.9123e+03
2 0.0000e+00 2.3213e+07
1 2.1096e+11 2.1096e+11
sum 2.1096e+11 2.1099e+11
Junction Depths and Integrated Dopant
Concentrations for Each Diffused Region
layer region type junction depth net total
no. no. (microns) active Qd chemical Qd
4 1 n 0.0000 0.0000e+00 0.0000e+00
3 1 n 0.0000 0.0000e+00 1.1104e+07
2 1 n 0.0000 0.0000e+00 2.3824e+09
1 2 n 0.0000 4.9003e+14 4.9027e+14
1 1 p 4.3502 8.2717e+10 9.1007e+10
Etch the oxide and nitride layers.
Move the fine grid to the surface.
Implant the boron base.
Remove oxide from emitter region.