Bulletin 2011/27 - European Patent Office
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Bulletin 2011/27 - European Patent Office

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(H01J) I.1(2)<br />

Inagaki, Fumihiro, Osaka 540-6207, JP<br />

Toda, Shogo, Osaka 540-6207, JP<br />

Hama, Masaaki, Osaka 540-6207, JP<br />

(74) Eisenführ, Speiser & Partner, Postfach 10 60<br />

78, 28060 Bremen, DE<br />

(62) 06756688.5 / 1 887 610<br />

H01J 61/52 → (51) F21V 29/02<br />

(51) H01J 63/06 (11) 2 341 5<strong>27</strong> A1<br />

H01J 1/30<br />

(25) Ja (26) En<br />

(21) 09817824.7 (22) 30.09.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

AL BA RS<br />

(86) JP 2009/067060 30.09.2009<br />

(87) WO 2010/038792 2010/14 08.04.2010<br />

(30) 30.09.2008 JP 2008254757<br />

(54) • FELDEMISSIONSLEUCHTE<br />

• FIELD EMISSION LAMP<br />

• LAMPE À ÉMISSION DE CHAMP<br />

(71) Toppan Printing Co., Ltd., 5-1, Taito 1chome<br />

Taito-ku, Tokyo 110-0016, JP<br />

Fuji Jukogyo Kabusiki Kaisha, 7-2<br />

Nishishinjuku 1-chome, Shinjuku-ku Tokyo<br />

160-8316, JP<br />

(72) GAMO, Hidenori, Tokyo 110-0016, JP<br />

NAMBA, Atsushi, Tokyo 160-8316, JP<br />

ARAKAWA, Toshiya, Tokyo 160-8316, JP<br />

(74) TBK, Bavariaring 4-6, 80336 München, DE<br />

H01L 21/00 → (51) G06K 19/077<br />

H01L 21/301 → (51) H01L 21/52<br />

H01L 21/304 → (51) C09J 7/02<br />

H01L 21/3205 → (51) H01L 21/768<br />

(51) H01L 21/329 (11) 2 341 528 A1<br />

H01L 29/06 H01L 29/32<br />

H01L 29/861<br />

(25) En (26) En<br />

(21) 10150107.0 (22) 05.01.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

AL BA RS<br />

(54) • Leistungshalbleiterbauelement und Verfahren<br />

zu dessen Herstellung<br />

• Power Semiconductor Device and its<br />

manufacturing method<br />

• Dispositif semi-conducteur de puissance et<br />

son procédé de fabrication<br />

(71) ABB Technology AG, Affolternstrasse 44,<br />

8050 Zürich, CH<br />

(72) Matthias, Sven, CH-5600, Lenzburg, CH<br />

Kopta Arnost, CH-8049 Zürich, CH<br />

Munaf Rahimo, CH-5619 Uezwil, CH<br />

(74) ABB <strong>Patent</strong> Attorneys, C/o ABB Schweiz AG<br />

Intellectual Property (CH-LC/IP) Brown<br />

Boveri Strasse 6, 5400 Baden, CH<br />

H01L 21/336 → (51) H01L 29/739<br />

(51) H01L 21/52 (11) 2 341 529 A1<br />

C09J 7/00 C09J 133/04<br />

H01L 21/301<br />

(25) Ja (26) En<br />

(21) 09820358.1 (22) 16.07.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

AL BA RS<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(86) JP 2009/003359 16.07.2009<br />

(87) WO 2010/044179 2010/16 22.04.2010<br />

(30) 16.10.2008 JP 2008267030<br />

23.04.2009 JP 2009105605<br />

(54) • VERFAHREN ZUR HERSTELLUNG EINER<br />

HALBLEITERANORDNUNG UND HALBLEI-<br />

TERANORDNUNG<br />

• METHOD FOR MANUFACTURING SEMI-<br />

CONDUCTOR DEVICE AND SEMICONDUC-<br />

TOR DEVICE<br />

• PROCÉDÉ DE FABRICATION D UN DISPO-<br />

SITIF À SEMI-CONDUCTEUR ET DISPOSI-<br />

TIF À SEMI-CONDUCTEUR<br />

(71) Sumitomo Bakelite Co., Ltd., 5-8 Higashi-<br />

Shinagawa 2-chome, Shinagawa-ku Tokyo<br />

140-0002, JP<br />

(72) SASAKI, Akitsugu, Tokyo 140-0002, JP<br />

(74) Vossius, Volker, et al, Dr. Volker Vossius<br />

<strong>Patent</strong>- und Rechtsanwaltskanzlei Geibelstrasse<br />

6, 81679 München, DE<br />

(51) H01L 21/683 (11) 2 341 530 A1<br />

(25) En (26) En<br />

(21) 11002114.4 (22) 18.07.2001<br />

(84) DE FR GB<br />

(30) 18.07.2000 JP 2000217953<br />

18.07.2000 JP 2000217988<br />

26.12.2000 JP 2000396225<br />

29.06.2001 JP 2001200113<br />

(54) • Herstellungsverfahren für Anordnungen<br />

von Halbleiterbauelementen<br />

• Production method of semiconductor<br />

device arrays<br />

• Procédé de production d'un ensemble des<br />

dispositfs semiconducteurs<br />

(71) Sony Corporation, 1-7-1 Konan Minato-ku,<br />

Tokyo 108-0075, JP<br />

(72) Iwafuchi, Toshiaki, Tokyo 108-0075, JP<br />

Oohata, Toyoharu, Tokyo 108-0075, JP<br />

Doi, Masato, Tokyo 108-0075, JP<br />

(74) Müller - Hoffmann & Partner, <strong>Patent</strong>anwälte<br />

Innere Wiener Strasse 17, 81667 München,<br />

DE<br />

(62) 01951901.6 / 1 310 934<br />

(51) H01L 21/768 (11) 2 341 531 A1<br />

H01L 21/3205 H01L 21/822<br />

H01L 23/52 H01L 23/522<br />

H01L <strong>27</strong>/04<br />

(25) Ja (26) En<br />

(21) 09815903.1 (22) 25.09.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

AL BA RS<br />

(86) JP 2009/004884 25.09.2009<br />

(87) WO 2010/035481 2010/13 01.04.2010<br />

(30) 26.09.2008 JP 2008248903<br />

26.09.2008 JP 2008248904<br />

(54) • HALBLEITERBAUELEMENT UND HALB-<br />

LEITERBAUELEMENT-HERSTELLUNGS-<br />

VERFAHREN<br />

• SEMICONDUCTOR DEVICE AND SEMI-<br />

CONDUCTOR DEVICE MANUFACTURING<br />

METHOD<br />

• DISPOSITIF À SEMI-CONDUCTEURS ET<br />

PROCÉDÉ DE FABRICATION DE DISPOSI-<br />

TIF À SEMI-CONDUCTEURS<br />

(71) Rohm Co., Ltd., 21, Saiin Mizosaki-cho<br />

Ukyo-ku, Kyoto-shi, Kyoto 615-8585, JP<br />

(72) NAKAGAWA, Ryosuke, Kyoto-shi Kyoto 615-<br />

8585, JP<br />

NAKAO, Yuichi, Kyoto-shi Kyoto 615-8585,<br />

JP<br />

(74) Witte, Weller & Partner, Königstrasse 5,<br />

70173 Stuttgart, DE<br />

H01L 21/822 → (51) H01L 21/768<br />

228<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>27</strong>/<strong>2011</strong>) 06.07.<strong>2011</strong><br />

H01L 23/00 → (51) H01L 25/07<br />

H01L 23/32 → (51) H01L 33/48<br />

(51) H01L 23/34 (11) 2 341 532 A1<br />

H01L 25/07<br />

(25) En (26) En<br />

(21) 09180967.3 (22) 30.12.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

AL BA RS<br />

(54) • Leistungshalbleitermodul und damit ausgestatteter<br />

leistungselektronischer<br />

Umrichter<br />

• Power semiconductor module and semiconductor<br />

power converter provided with<br />

the same<br />

• Module semi-conducteur de puissance et<br />

convertisseur de puissance semi-conducteur<br />

doté de celui-ci<br />

(71) Kabushiki Kaisha Toshiba, 1-1, Shibaura 1-<br />

Chome Minato-Ku, Tokyo 105-8001, JP<br />

(72) Ninomiya, Gou, Tokyo 105-8001, JP<br />

Baba, Shinichi, Tokyo 105-8001, JP<br />

Shimizu, Yoshiyuki, Tokyo 105-8001, JP<br />

Ueda, Kazuhiro, Tokyo 105-8001, JP<br />

Obu, Toshiharu, Tokyo 105-8001, JP<br />

(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />

Arabellastraße 4, 81925 München, DE<br />

(51) H01L 23/495 (11) 2 341 533 A2<br />

(25) De (26) De<br />

(21) 11002935.2 (22) 28.07.2008<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

(30) 23.08.2007 DE 102007039916<br />

(54) • Aufbau- und Verbindungstechnik von<br />

Modulen mittels aus einer Ebene heraus<br />

gebogenen metallischen Stanzgitter oder<br />

Stanzbiegeteilen<br />

• MODULE CONSTRUCTION AND CONNEC-<br />

TION TECHNOLOGY BY MEANS OF METAL<br />

SCRAP WEB OR BENT STAMPING PARTS<br />

BENT FROM A PLANE<br />

• TECHNIQUE DE CONSTRUCTION ET DE<br />

RACCORD DE MODULES AU MOYEN D'UN<br />

PATRON DE DECOUPAGE METALLIQUE<br />

PLIE HORS D'UN PLAN OU DE PIECES<br />

DECOUPEES ET PLIEES HORS D'UN PLAN<br />

(71) Siemens Aktiengesellschaft, Wittelsbacherplatz<br />

2, 80333 Munich, DE<br />

(72) Kaspar, Michael, Dr., 85640 Putzbrunn, DE<br />

Schimetta, Gernot, Dr., 81541 München, DE<br />

Weidner, Karl, 81245 München, DE<br />

Zapf, Jörg, 819<strong>27</strong> München, DE<br />

(62) 08786502.8 / 2 181 461<br />

H01L 23/52 → (51) H01L 21/768<br />

H01L 23/522 → (51) H01L 21/768<br />

H01L 25/065 → (51) G01R 31/3185<br />

(51) H01L 25/07 (11) 2 341 534 A1<br />

H01L 23/00 H01R 13/24<br />

(25) De (26) De<br />

(21) 10192550.1 (22) 25.11.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 05.01.2010 DE 102010000694<br />

(54) • Leistungshalbleitermodul<br />

• Power semiconductor module<br />

• Module semi-conducteur de puissance

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