Bulletin 2011/27 - European Patent Office
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Bulletin 2011/27 - European Patent Office

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(H01J) II.1(1)<br />

(21) 97939401.2 (22) 11.08.1997<br />

(84) CH DE DK FR GB IT LI SE<br />

(43) 06.10.1999<br />

(86) US 1997/014203 11.08.1997<br />

(87) WO 1998/006481 1998/07 19.02.1998<br />

(30) 09.08.1996 US 694542<br />

(54) • MULTIPOL IONENLEITER, IONENFALLE<br />

MASSENSPEKTROMETRIE<br />

• MULTIPOLE ION GUIDE ION TRAP MASS<br />

SPECTROMETRY<br />

• SPECTROMETRIE A PIEGEAGE D'IONS<br />

PAR GUIDE D'IONS MULTIPOLAIRES<br />

(73) PerkinElmer Health Sciences, Inc., 940<br />

Winter Street, Waltham, MA 02451-1457, US<br />

(72) WHITEHOUSE, Craig M., Branford, CT<br />

06405, US<br />

DRESCH, Thomas, Branford, CT 06405, US<br />

ANDRIEN, Bruce A., Branford, CT 06405, US<br />

(74) Faulkner, Thomas John, Cleveland 40-43<br />

Chancery Lane, London WC2A 1JQ, GB<br />

(51) H01J 49/42 (11) 1 396 008 B1<br />

H01J 49/04<br />

(25) En (26) En<br />

(21) 0<strong>27</strong>29711.8 (22) 23.05.2002<br />

(84) AT BE CH CY DE DK ES FI FR GB GR IE IT LI<br />

LU MC NL PT SE TR<br />

(43) 10.03.2004<br />

(86) CA 2002/000751 23.05.2002<br />

(87) WO 2002/097412 2002/49 05.12.2002<br />

(30) 25.05.2001 US 293161 P<br />

(54) • VERFAHREN FÜR DIE MASSENSPEKTRO-<br />

METRIE ZWECKS TRENNUNG VON IONEN<br />

MIT UNTERSCHIEDLICHEN LADUNGEN<br />

• METHOD FOR MASS SPECTROMETRY,<br />

SEPARATION OF IONS WITH DIFFERENT<br />

CHARGES<br />

• PROCEDE DE SPECTROMETRIE DE<br />

MASSE POUR ACCENTUER LA SEPARA-<br />

TION D'IONS POSSEDANT DES CHARGES<br />

DIFFERENTES<br />

(73) MDS Inc., doing business as MDS Sciex, 71<br />

Four Valley Drive, Concord, Ontario L4K 4V8,<br />

CA<br />

(72) HAGER, James, W., Mississauga, Ontario<br />

L5N 2A4, CA<br />

(74) Hackney, Nigel John, et al, Mewburn Ellis<br />

LLP 33 Gutter Lane, London EC2V 8AS, GB<br />

H01K 1/46 → (51) H01J 9/30<br />

(51) H01L 21/00 (11) 1 376 658 B1<br />

(25) En (26) En<br />

(21) 02020903.7 (22) 18.09.2002<br />

(84) DE FR GB<br />

(43) 02.01.2004<br />

(30) 25.06.2002 JP 2002184753<br />

(54) • Verfahren und Vorrichtung zur Herstellung<br />

eines Halbleiterbauelements<br />

• Method and apparatus for manufacturing<br />

semiconductor device<br />

• Méthode et appareil de fabrication de<br />

dispositif semiconducteur<br />

(73) Kabushiki Kaisha Toshiba, 1-1, Shibaura 1chome,<br />

Minato-ku, Tokyo, JP<br />

(72) Takemura, Hisao, Minato-ku, Tokyo 105-<br />

8001, JP<br />

(74) Henkel, Feiler & Hänzel, <strong>Patent</strong>anwälte Maximiliansplatz<br />

21, 80333 München, DE<br />

(51) H01L 21/02 (11) 1 320 901 B1<br />

H01L 21/20<br />

(25) En (26) En<br />

(21) 01961721.6 (22) 25.07.2001<br />

(84) AT BE CH CY DE DK ES FI FR GB GR IE IT LI<br />

LU MC NL PT SE TR<br />

(43) 25.06.2003<br />

(86) US 2001/023330 25.07.2001<br />

(87) WO 2002/009199 2002/05 31.01.2002<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(30) 26.07.2000 US 626442<br />

(54) • VERBESSERTER PUFFER ZUM WACHS-<br />

TUM VON GaN AUF SAPHIR<br />

• IMPROVED BUFFER FOR GROWTH OF GaN<br />

ON SAPPHIRE<br />

• TAMPON AMELIORE DESTINE A LA<br />

CROISSANCE DE GAN SUR SAPHIR<br />

(73) Lumei Optoelectronics Corporation, 9650<br />

Telstar Avenue, El Monte, CA 91731, US<br />

(72) CHEN, Changhua, deceased, US<br />

DONG, James, Claremont, CA 91711, US<br />

LIU, Heng, Sunnyvale, CA 94087, US<br />

Cheng, Xiuping, San Jose, CA 95129, US<br />

(74) Zech, Stefan Markus, Meissner, Bolte &<br />

Partner GbR Widenmayerstrasse 48, 80538<br />

München, DE<br />

H01L 21/02 → (51) H01L 21/0<strong>27</strong><br />

(51) H01L 21/0<strong>27</strong> (11) 1 791 166 B1<br />

H01L 21/02<br />

(25) Ja (26) En<br />

(21) 05768853.3 (22) 08.08.2005<br />

(84) DE FR IT<br />

(43) 30.05.2007<br />

(86) JP 2005/014510 08.08.2005<br />

(87) WO 2006/016550 2006/07 16.02.2006<br />

(30) 11.08.2004 JP 2004234765<br />

08.07.2005 JP 2005199673<br />

(54) • VERFAHREN ZUR MESSUNG DER TEM-<br />

PERATUR EINER WÄRMEPLATTE, VOR-<br />

RICHTUNG ZUR<br />

SUBSTRATVERARBEITUNG UND COMPU-<br />

TERPROGRAMM ZUR MESSUNG DER<br />

TEMPERATUR EINER WÄRMEPLATTE<br />

• METHOD FOR MEASURING HEATING<br />

PLATE TEMPERATURE, SUBSTRATE<br />

PROCESSING EQUIPMENT, AND COMPU-<br />

TER PROGRAM FOR MEASURING HEAT-<br />

ING PLATE TEMPERATURE<br />

• PROCEDE DE MESURE DE LA TEMPERA-<br />

TURE D'UNE PLAQUE CHAUFFANTE,<br />

EQUIPMENT DE TRAITEMENT DE SUBS-<br />

TRAT, ET PROGRAMME INFORMATIQUE<br />

POUR MESURER LA TEMPERATURE DE<br />

LA PLAQUE CHAUFFANTE<br />

(73) Tokyo Electron Limited, 3-1, Akasaka 5chome<br />

Minato-ku, Tokyo 107-6325, JP<br />

(72) TOMITA, Hiroshi, Kumamoto 8611116, JP<br />

ASAI, Ryuji, Kumamoto 8611116, JP<br />

(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />

Arabellastraße 4, 81925 München, DE<br />

H01L 21/20 → (51) H01L 21/02<br />

H01L 21/20 → (51) H01L 21/762<br />

(51) H01L 21/205 (11) 1 564 794 B1<br />

C23C 16/509<br />

(25) Ja (26) En<br />

(21) 0<strong>27</strong>77987.5 (22) 29.10.2002<br />

(84) DE ES FR GB IT NL<br />

(43) 17.08.2005<br />

(86) JP 2002/011208 29.10.2002<br />

(87) WO 2004/040629 2004/20 13.05.2004<br />

(54) • VERFAHREN UND VORRICHTUNG ZUR<br />

ERZEUGUNG VON GLEICHMAESSIGEM<br />

HOCHFREQUENZPLASMA ÜBER EINEN<br />

GROSSEN OBERFLAECHENBEREICH<br />

• METHOD AND DEVICE FOR GENERATING<br />

UNIFORM HIGH- FREQUENCY PLASMA<br />

OVER LARGE SURFACE AREA<br />

• PROCEDE ET DISPOSITIF DE PREPARA-<br />

TION DE PLASMA HAUTE FREQUENCE<br />

UNIFORME SUR UNE SURFACE IMPOR-<br />

TANTE<br />

(73) MITSUBISHI HEAVY INDUSTRIES, LTD., 5-<br />

1, Marunouchi 2-chome, Chiyoda-ku, Tokyo<br />

100-8315, JP<br />

518<br />

<strong>Patent</strong>e<br />

<strong>Patent</strong>s<br />

Brevets (<strong>27</strong>/<strong>2011</strong>) 06.07.<strong>2011</strong><br />

(72) KAWAMURA, Keisuke, C/O NAGASAKI<br />

Research & Development Center, Nagasakishi,<br />

Nagasaki 851-0392, JP<br />

TAKANO, Akemi, C/O NAGASAKI Research &<br />

Development Center, Mitsubishi Heavy<br />

Industries, Ltd., Nagasaki-shi, Nagasaki 851-<br />

0392, JP<br />

MASHIMA, Hiroshi, C/O NAGASAKI Research<br />

& Development Center, Mitsubishi Heavy<br />

Industries, Ltd., Nagasaki-shi, Nagasaki 851-<br />

0392, JP<br />

TAKATUKA, Hiromu, C/O NAGASAKI Shipyard<br />

& Machinery Works, Mitsubishi Heavy<br />

Industries, Ltd., Nagasaki-shi, Nagasaki 850-<br />

8610, JP<br />

YAMAUTI, Yasuhiro, C/O NAGASAKI Shipyard<br />

& Machinery Works, Mitsubishi Heavy<br />

Industries, Ltd., Nagasaki-shi, Nagasaki 850-<br />

8610, JP<br />

TAKEUCHI, Yoshiaki, C/O NAGASAKI<br />

Research & Development Center, Mitsubishi<br />

Heavy Industries, Ltd., Nagasaki-shi, Nagasaki<br />

851-0392, JP<br />

SASAKAWA, Eishiro, C/O NAGASAKI Shipyard<br />

& Machinery Works, Mitsubishi Heavy<br />

Industries, Ltd., Nagasaki-shi, Nagasaki 850-<br />

8610, JP<br />

(74) Henkel, Feiler & Hänzel, <strong>Patent</strong>anwälte Maximiliansplatz<br />

21, 80333 München, DE<br />

(51) H01L 21/304 (11) 1 542 267 B1<br />

B24B 37/04<br />

(25) Ja (26) En<br />

(21) 03784489.1 (22) 30.07.2003<br />

(84) DE<br />

(43) 15.06.2005<br />

(86) JP 2003/009658 30.07.2003<br />

(87) WO 2004/015752 2004/08 19.02.2004<br />

(30) 09.08.2002 JP 2002232693<br />

(54) • VERFAHREN UND VORRICHTUNG ZUM<br />

POLIEREN EINES WAFERS<br />

• METHOD AND APPARATUS FOR POLISH-<br />

ING WAFER<br />

• PROCEDE ET APPAREIL DE POLISSAGE<br />

D'UNE TRANCHE<br />

(73) Shin-Etsu Handotai Co., Ltd., 6-2, Ohtemachi<br />

2-chome Chiyoda-ku, Tokyo, JP<br />

(72) TSUCHIYA, Toshihiro, SHIN-ETSU HANDO-<br />

TAI CO., Nishishirakawa-gun, JP<br />

(74) Grünecker, Kinkeldey, Stockmair & Schwanhäusser<br />

Anwaltssozietät, Leopoldstrasse 4,<br />

80802 München, DE<br />

H01L 21/306 → (51) C23F 1/00<br />

(51) H01L 21/322 (11) 1 804 283 B1<br />

C30B 15/00 C30B 29/06<br />

(25) En (26) En<br />

(21) 060258<strong>27</strong>.4 (22) 13.12.2006<br />

(84) DE<br />

(43) 04.07.2007<br />

(30) <strong>27</strong>.12.2005 JP 2005376306<br />

(54) • Verfahren zur Herstellung einer getemperten<br />

Halbleiterscheibe<br />

• Manufacturing method of annealed wafer<br />

• Procédé de fabrication d'une plaquette<br />

recuite<br />

(73) Siltronic AG, Hanns-Seidel-Platz 4, 81737<br />

München, DE<br />

(72) Nakai, Katsuhiko, Dr., Hikari, Yamaguchi,<br />

743-0071, JP<br />

Fukuhara, Koji, Hikari, Yamaguchi, 743-<br />

0011, JP<br />

(74) Staudacher, Wolfgang, et al, Siltronic AG<br />

Corporate Intellectual Property Hanns-Seidel-<br />

Platz 4, 81737 München, DE<br />

(51) H01L 21/336 (11) 1 958 243 B1<br />

(25) En (26) En

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