Bulletin 2011/27 - European Patent Office
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(H01L) II.1(1)<br />

(74) de Beaumont, Michel, Cabinet Beaumont 1,<br />

rue Champollion, 38000 Grenoble, FR<br />

(51) H01L <strong>27</strong>/146 (11) 2 083 447 B1<br />

H04N 5/225 G02B 3/00<br />

H04N 5/335<br />

(25) En (26) En<br />

(21) 09250197.2 (22) 26.01.2009<br />

(84) DE FR GB<br />

(43) 29.07.2009<br />

(30) 28.01.2008 JP 2008016717<br />

(54) • Bildaufnahmevorrichtung<br />

• Image pickup apparatus<br />

• Appareil de capture d'images<br />

(73) Sony Corporation, 1-7-1 Konan, Minato-ku,<br />

Tokyo, JP<br />

(72) Ichimura, Isao, Tokyo, JP<br />

(74) DeVile, Jonathan Mark, D Young & Co LLP<br />

120 Holborn, London EC1N 2DY, GB<br />

(51) H01L <strong>27</strong>/146 (11) 2 093 800 B1<br />

H01L <strong>27</strong>/148<br />

(25) En (26) En<br />

(21) 09007845.2 (22) 09.11.2004<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LU MC NL PL PT RO SE SI<br />

SK TR<br />

(43) 26.08.2009<br />

(30) 29.06.2004 US 879398<br />

(54) • Verpackte mikroelektronische Bildsensoren<br />

und Verpackungsverfahren dazu<br />

• Packaged microelectronic imagers and<br />

methods of packaging microelectronic<br />

imagers<br />

• Imageur microélectronique emballé et<br />

procédé d'emballage d'imageur microélectronique<br />

(73) Round Rock Research, LLC, 26 Deer Creek<br />

Lane, Mount Kisco, NY 10549, US<br />

(72) Akram, Salman, Boise Idaho 83706, US<br />

Watkins, Charles M., Eagle Idaho 83616, US<br />

Kirkby, Kyle K., Eagle Idaho 83616, US<br />

Wood, Alan G., Boise Idaho 83706, US<br />

Hiatt, William M., Eagle Idaho 83616, US<br />

(74) Phillips, Emily Elizabeth, et al, Kilburn &<br />

Strode LLP 20 Red Lion Street, London<br />

WC1R 4PJ, GB<br />

(62) 04822213.7 / 1 763 897<br />

H01L <strong>27</strong>/148 → (51) H01L <strong>27</strong>/146<br />

(51) H01L <strong>27</strong>/16 (11) 1 333 503 B1<br />

H01L 35/00 B81B 3/00<br />

G01J 5/12 G01J 5/02<br />

(25) En (26) En<br />

(21) 03075166.3 (22) 17.01.2003<br />

(84) DE FR GB<br />

(43) 06.08.2003<br />

(30) 04.02.2002 US 354589 P<br />

(54) • Verfahren zur Herstellung eines monolithisch<br />

integrierten mikromechanischen<br />

Sensors und Schaltkreises<br />

• Process for a monolithically-integrated<br />

micromachined sensor and circuit<br />

• Procédé de fabrication d'un sensor micromachiné<br />

à intégration monolithique et un<br />

circuit<br />

(73) Delphi Technologies, Inc., PO Box 5052,<br />

Troy, MI 48007, US<br />

(72) Chavan, Abhijeet V., Carmel, IN 46032, US<br />

Logsdon, James H., Kokomo, IN 46902, US<br />

Chilcott, Dan W., Greentown, IN 46936, US<br />

Christenson, John C., Kokomo, IN 46901,<br />

US<br />

Speck, Robert K., Kokomo, IN 46902, US<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(74) Denton, Michael John, Delphi France SAS 64<br />

Avenue de la Plaine de France ZAC Paris<br />

Nord II B.P. 65059, Tremblay en France,<br />

95972 Roissy Charles de Gaulle Cedex, FR<br />

(51) H01L <strong>27</strong>/24 (11) 1 947 696 B1<br />

H01L 45/00<br />

(25) En (26) En<br />

(21) 08155548.4 (22) <strong>27</strong>.05.2004<br />

(84) DE FR GB<br />

(43) 23.07.2008<br />

(30) 03.06.2003 KR 20030035562<br />

(54) • Nichtflüchtige Speichervorrichtung mit<br />

einer Schaltvorrichtung und einem widerstandsfähigen<br />

Material und Verfahren zu<br />

deren Herstellung<br />

• Nonvolatile memory device comprising a<br />

switching device and a resistant material<br />

and method of manufacturing the same<br />

• Dispositif à mémoire volatile comprenant<br />

un dispositif de commutation et un<br />

matériau résistant et procédé de fabrication<br />

correspondant<br />

(73) Samsung Electronics Co., Ltd, 416, Maetandong<br />

Yeongtong-gu, Suwon-si, Gyeonggi-do<br />

443-742, KR<br />

(72) Seo, Sun-ae, Seoul, KR<br />

Yoo, In-kyeong, Suwon-si, Gyeonggi-do, KR<br />

Lee, Myoung-jae, Suwon-si, Gyeonggi-do,<br />

KR<br />

Park, Wan-jun, Seoul, KR<br />

(74) Anderson, James Edward George, Elkington<br />

and Fife LLP Prospect House 8 Pembroke<br />

Road, Sevenoaks, Kent TN13 1XR, GB<br />

(62) 04253135.0 / 1 484 799<br />

(51) H01L 29/08 (11) 1 713 128 B1<br />

H01L 29/739<br />

(25) En (26) En<br />

(21) 06007623.9 (22) 11.04.2006<br />

(84) DE FR SE<br />

(43) 18.10.2006<br />

(30) 14.04.2005 JP 2005116406<br />

(54) • IGBT und diesen verwendende elektrische<br />

Stromwandlungsvorrichtung<br />

• IGBT and electric power conversion device<br />

using it<br />

• IGBT et appareil de conversion de puissance<br />

électrique l'utilisant<br />

(73) HITACHI, LTD., 6-6, Marunouchi 1-chome,<br />

Chiyoda-ku Tokyo 100-8280, JP<br />

(72) Arai, Taiga Hitachi, Ltd., Chiyoda-ku Tokyo<br />

100-8220, JP<br />

Mori, Mutsuhiro Hitachi, Ltd., Chiyoda-ku<br />

Tokyo 100-8220, JP<br />

Oyama, Kazuhiro Hitachi, Ltd., Chiyoda-ku<br />

Tokyo 100-8220, JP<br />

Kohno, Yasuhiko Hitachi, Ltd., Chiyoda-ku<br />

Tokyo 100-8220, JP<br />

Sakurai, Naoki Hitachi, Ltd., Chiyoda-ku<br />

Tokyo 100-8220, JP<br />

(74) Strehl Schübel-Hopf & Partner, Maximilianstrasse<br />

54, 80538 München, DE<br />

(60) 10009398.8 / 2 256 813<br />

H01L 29/08 → (51) H01L 29/76<br />

H01L 29/10 → (51) H01L 29/778<br />

H01L 29/15 → (51) H01L 29/778<br />

H01L 29/40 → (51) H01L 29/78<br />

H01L 29/417 → (51) H01L 21/336<br />

H01L 29/417 → (51) H01L 29/78<br />

H01L 29/423 → (51) H01L 29/78<br />

520<br />

<strong>Patent</strong>e<br />

<strong>Patent</strong>s<br />

Brevets (<strong>27</strong>/<strong>2011</strong>) 06.07.<strong>2011</strong><br />

H01L 29/739 → (51) H01L 29/08<br />

(51) H01L 29/76 (11) 1 433 206 B1<br />

H01L 21/336 H01L 29/08<br />

(25) Fr (26) Fr<br />

(21) 02800173.3 (22) 02.10.2002<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR IE IT LI LU MC NL PT SE SK TR<br />

(43) 30.06.2004<br />

(86) FR 2002/003354 02.10.2002<br />

(87) WO 2003/030266 2003/15 10.04.2003<br />

(30) 04.10.2001 FR 011<strong>27</strong>55<br />

(54) • EIN-ELEKTRON-TRANSISTOR MIT EINEM<br />

VERTIKALKANAL, UND HERSTELLUNGS-<br />

VERFAHREN DAFÜR<br />

• SINGLE ELECTRON TRANSISTOR WITH<br />

VERTICAL CHANNEL, AND PRODUCTION<br />

METHODS THEREOF<br />

• TRANSISTOR A UN ELECTRON ET A<br />

CANAL VERTICAL, ET PROCEDES DE<br />

REALISATION D'UN TEL TRANSISTOR<br />

(73) Commissariat à l'Énergie Atomique et aux<br />

Énergies Alternatives, Bâtiment "Le Ponant D"<br />

25, rue Leblanc, 75015 Paris, FR<br />

(72) FRABOULET, David, F-38950 Quaix en<br />

Chartreuse, FR<br />

DELEONIBUS, Simon 40, allée des Giteaux,<br />

F-38640 Claix, FR<br />

(74) Poulin, Gérard, et al, BREVALEX 95 rue<br />

d'Amsterdam, 75378 Paris Cedex 8, FR<br />

(51) H01L 29/778 (11) 1 282 918 B1<br />

H01L 29/15 H01L 29/10<br />

(25) En (26) En<br />

(21) 01925702.1 (22) 02.05.2001<br />

(84) AT BE CH CY DE DK ES FI FR GB GR IE IT LI<br />

LU MC NL PT SE TR<br />

(43) 12.02.2003<br />

(86) GB 2001/001919 02.05.2001<br />

(87) WO 2001/088995 2001/47 22.11.2001<br />

(30) 19.05.2000 GB 0012017<br />

(54) • LADUNGSTRÄGER-EXTRAKTIONS-TRAN-<br />

SISTOR<br />

• CHARGE CARRIER EXTRACTING TRAN-<br />

SISTOR<br />

• TRANSISTOR D'EXTRACTION DE POR-<br />

TEURS DE CHARGE<br />

(73) QinetiQ Limited, Cody Technology Park Ively<br />

Road, Farnborough Hampshire GU14 0LX,<br />

GB<br />

(72) PHILLIPS, Timothy Jonathan, Malvern,<br />

Worcs WR14 3PS, GB<br />

(74) Williams, Arthur Wyn Spencer, et al, QinetiQ<br />

Limited Intellectual Property Malvern Technology<br />

Centre St Andrews Road Malvern,<br />

Worcestershire WR14 3PS, GB<br />

(51) H01L 29/78 (11) 1 306 905 B1<br />

H01L 29/40 H01L 29/417<br />

H01L 29/423<br />

(25) En (26) En<br />

(21) 02255740.9 (22) 16.08.2002<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR IE IT LI LU MC NL PT SE SK TR<br />

(43) 02.05.2003<br />

(30) 29.10.2001 US 16748<br />

(54) • Lateraler Leistungs-MOSFET<br />

• Lateral power MOSFET<br />

• MOSFET latéral de puissance<br />

(73) Power Integrations, Inc., 5245 Hellyer Avenue,<br />

San Jose, California 95138, US<br />

(72) Disney, Donald Ray, Cupertino, California<br />

95015, US<br />

Grabowski, Wayne Bryan, Los Altos, California,<br />

94024, US<br />

(74) Peterreins, Frank, et al, Fish & Richardson P.<br />

C. HighLight Business Towers Mies-van-der-<br />

Rohe-Strasse 8, 80807 München, DE

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