Bulletin 2011/27 - European Patent Office
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(H01L) I.1(2)<br />

(71) SEMIKRON Elektronik GmbH & Co. KG,<br />

<strong>Patent</strong>abteilung Sigmundstrasse 200, 90431<br />

Nürnberg, DE<br />

(72) Popp, Rainer, 91580, Petersaurach, DE<br />

Frank, Thomas, 91207, Lauf, DE<br />

(51) H01L 25/07 (11) 2 341 535 A1<br />

(25) De (26) De<br />

(21) 10187782.7 (22) 15.10.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 05.12.2009 DE 102009057146<br />

(54) • Druckkontaktiertes Leistungshalbleitermodul<br />

mit Hybriddruckspeicher<br />

• Pressure-contacted high performance<br />

semiconductor module with hybrid pressure<br />

accumulator<br />

• Module semi-conducteur de puissance à<br />

contact de pression doté d'une mémoire<br />

d'impression hybride<br />

(71) SEMIKRON Elektronik GmbH & Co. KG,<br />

<strong>Patent</strong>abteilung Sigmundstrasse 200, 90431<br />

Nürnberg, DE<br />

(72) Lederer, Marco, 90453 Nürnberg, DE<br />

Popp, Rainer, 91580 Petersaurach, DE<br />

H01L 25/07 → (51) H01L 23/34<br />

(51) H01L 25/075 (11) 2 341 536 A2<br />

F21K 99/00<br />

(25) En (26) En<br />

(21) 10195070.7 (22) 15.12.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 24.12.2009 JP 2009293411<br />

(54) • Beleuchtungsvorrichtung<br />

• Lighting apparatus<br />

• Appareil d'éclairage<br />

(71) Toshiba Lighting & Technology Corporation,<br />

1-201-1, Funakoshi-cho, Yokosuka-shi<br />

Kanagawa 237-8510, JP<br />

Kabushiki Kaisha Toshiba, 1-1, Shibaura 1chome,<br />

Minato-ku, Tokyo 105-8001, JP<br />

(72) Nishimura, Kiyoshi, Kanagawa 237-8510, JP<br />

Oyaizu, Tsuyoshi, Kanagawa 237-8510, JP<br />

Ogawa, Kozo, Kanagawa 237-8510, JP<br />

(74) Kramer - Barske - Schmidtchen, Landsberger<br />

Strasse 300, 80687 München, DE<br />

H01L 25/075 → (51) H01L 33/50<br />

(51) H01L <strong>27</strong>/02 (11) 2 341 537 A2<br />

H01L <strong>27</strong>/118<br />

(25) En (26) En<br />

(21) 10196150.6 (22) 21.12.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 29.12.2009 US 648880<br />

(54) • Flexible CMOS-Bibliotheksarchitektur zur<br />

Verlustleistungs- und Schwankungsreduzierung<br />

• Flexible CMOS library architecture for<br />

leakage power and variability reduction<br />

• Architecture flexible de bibliothèque CMOS<br />

pour la réduction de la puissance et<br />

variabilité de fuite<br />

(71) NXP B.V., High Tech Campus 60, 5656 AG<br />

Eindhoven, NL<br />

(72) Veendrick, Hendricus, Redhill, Surrey RH1<br />

1DL, GB<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

Sevat, Leonardus, Redhill, Surrey RH1 1DL,<br />

GB<br />

(74) Hardingham, Christopher Mark, NXP Semiconductors<br />

Intellectual Property and Licensing<br />

Department Betchworth House 57-65<br />

Station Road Redhill, Surrey RH1 1DL, GB<br />

H01L <strong>27</strong>/04 → (51) H01L 21/768<br />

(51) H01L <strong>27</strong>/06 (11) 2 341 538 A2<br />

H01L <strong>27</strong>/088<br />

(25) En (26) En<br />

(21) 10197438.4 (22) 30.12.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 30.12.2009 US 291107 P<br />

05.10.2010 US 898664<br />

(54) • Spannungswandler mit integriertem<br />

Schottky-Bauelement und Systeme damit<br />

• Voltage converter with integrated Schottky<br />

device and systems including same<br />

• Convertisseur de tension avec dispositif de<br />

Schottky intégré et systèmes l'incluant<br />

(71) Intersil Americas Inc., 1001 Murphy Ranch<br />

Road, Milpitas, CA 95035, US<br />

(72) Girdhar, Dev Alok, Indiatlantic, FL 32903, US<br />

Hebert, Francois, San Mateo, CA 94402, US<br />

(74) Fleuchaus, Michael A., Fleuchaus & Gallo<br />

Partnerschaft <strong>Patent</strong>- und Rechtsanwälte<br />

Sollner Straße 36, 81479 München, DE<br />

H01L <strong>27</strong>/088 → (51) H01L <strong>27</strong>/06<br />

H01L <strong>27</strong>/118 → (51) H01L <strong>27</strong>/02<br />

(51) H01L <strong>27</strong>/146 (11) 2 341 539 A2<br />

H04N 5/335<br />

(25) En (26) En<br />

(21) 11158946.1 (22) 11.03.2005<br />

(84) DE FR GB IT<br />

(54) • Bildsensor mit eingebetteter Photodiodenregion<br />

und Herstellungsverfahren dafür<br />

• Image sensor with embedded photodiode<br />

region and manufacturing method for<br />

same<br />

• Capteur d'images avec région de photodiode<br />

intégrée et procédé de fabrication<br />

associé<br />

(71) Fujitsu Semiconductor Limited, 2-10-23<br />

Shin-Yokohama, Kohoku-ku, Yokohama-shi<br />

Kanagawa 222-0033, JP<br />

(72) Inoue, Tadao, Kanagawa 211-8588, JP<br />

Yamamoto, Katsuyoshi, Kanagawa 211-<br />

8588, JP<br />

Ohkawa, Narumi, Kanagawa 211-8588, JP<br />

(74) Stebbing, Timothy Charles, Haseltine Lake<br />

LLP Lincoln House, 5th Floor 300 High<br />

Holborn, London WC1V 7JH, GB<br />

(62) 05720593.2 / 1 858 082<br />

(51) H01L <strong>27</strong>/146 (11) 2 341 540 A2<br />

(25) En (26) En<br />

(21) 10187114.3 (22) 11.10.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 31.12.2009 TW 098146151<br />

(54) • Bildsensorgehäusestruktur mit Verkapselungsstoff<br />

mit niedrigem Durchlässigkeitsgrad<br />

• Image sensor packaging structure with low<br />

transmittance encapsulant<br />

• Structure d'emballage de capteur d'images<br />

avec agent d'encapsulation à faible transmission<br />

229<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>27</strong>/<strong>2011</strong>) 06.07.<strong>2011</strong><br />

(71) Kingpak Technology Inc., No. 84, Tai-Ho<br />

Road Chu-Pei 302, Hsin chu hsien, TW<br />

(72) Tu, Hsiu-Wen, Hsin-Chu Hsien, TW<br />

Hsin, Chung-Hsien, Hsin-Chu Hsien, TW<br />

Chuang, Chun-Hua, Hsin-Chu Hsien, TW<br />

Kuo, Ren-Long, Hsin-Chu Hsien, TW<br />

Lin, Chin-Fu, Hsin-Chu Hsien, TW<br />

Shiao, Young-Houng, Hsin-Chu Hsien, TW<br />

(74) Lang, Christian, et al, LangRaible GbR<br />

<strong>Patent</strong>- und Rechtsanwälte Rosenheimerstrasse<br />

139, 81671 München, DE<br />

(51) H01L <strong>27</strong>/146 (11) 2 341 541 A2<br />

(25) En (26) En<br />

(21) 10187111.9 (22) 11.10.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 31.12.2009 TW 098146153<br />

(54) • Bildsensorgehäusestruktur mit vorgegebener<br />

Brennweite<br />

• Image sensor packaging structure with<br />

predetermined focal length<br />

• Structure d'emballage de capteur d'images<br />

avec longueur focale prédéterminée<br />

(71) Kingpak Technology Inc., No. 84, Tai-Ho<br />

Road Chu-Pei 302, Hsin chu hsien, TW<br />

(72) Tu, Hsiu-Wen, Hsin-Chu Hsien, TW<br />

Hsin, Chung-Hsien, Hsin-Chu Hsien, TW<br />

Chuang, Chun-Hua, Hsin-Chu Hsien, TW<br />

Kuo, Ren-Long, Hsin-Chu Hsien, TW<br />

Lin, Chin-Fu, Hsin-Chu Hsien, TW<br />

Shiao, Young-Houng, Hsin-Chu Hsien, TW<br />

(74) Lang, Christian, et al, LangRaible GbR<br />

<strong>Patent</strong>- und Rechtsanwälte Rosenheimerstrasse<br />

139, 81671 München, DE<br />

(51) H01L <strong>27</strong>/146 (11) 2 341 542 A2<br />

(25) En (26) En<br />

(21) 10170692.7 (22) 23.07.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO SE SI SK SM TR<br />

BA ME RS<br />

(30) 29.12.2009 KR 20090132825<br />

(54) • Bildsensor mit lichtempfindlichem transparentem<br />

Oxidhalbleitermaterial<br />

• Image sensor using light-sensitive transparent<br />

oxide semiconductor material<br />

• Capteur d'image utilisant un matériau<br />

semi-conducteur à oxyde transparent sensible<br />

à la lumière<br />

(71) Samsung Electronics Co., Ltd., 416 Maetandong<br />

Yeongtong-gu, Suwon-si, Gyeonggi-do<br />

442-742, KR<br />

(72) Park, Sung-ho, 449-712 Gyeonggi-do, KR<br />

Song, I-hun, 449-712 Gyeonggi-do, KR<br />

Hur, Ji-hyun, 449-712 Gyeonggi-do, KR<br />

Jeon, Sang-hun, 449-712 Gyeonggi-do, KR<br />

(74) Greene, Simon Kenneth, Elkington and Fife<br />

LLP Prospect House 8 Pembroke Road,<br />

Sevenoaks Kent TN13 1XR, GB<br />

(51) H01L <strong>27</strong>/15 (11) 2 341 543 A1<br />

H01L 33/62<br />

(25) En (26) En<br />

(21) 10188088.8 (22) 19.10.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 31.12.2009 KR 20090135309<br />

(54) • Lichtemittierende Vorrichtung und Verfahren<br />

zu ihrer Herstellung<br />

• Light emitting device and method of<br />

fabricating the same

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