Das Forschungszentrum Jülich - d-nb, Archivserver DEPOSIT.D-NB ...

Im Rahmen des "CNI-Seminars" hat eine Vielzahl von national und international anerkannten
Wissenschaftlern referiert. Das CNI-Seminar wird im Jahr 2005 fortgesetzt.
D - Weitere Programmentwicklung
siehe Programmergebnisse
Details:
http://www.fz-juelich.de/scientific-report-2004/details/42_42-IT-Nano-Topics 2004_final3a.pdf
Publikationen in begutachteten Zeitschriften
Afanas'ev V. V.*,Stesmans A.*,Zhao C.*,Caymax M.*,Heeg T.,Schubert J.,Jia Y.*,Schlom D. G.*,Lucovsky G.*
Band alignment between (100)Si and complex rare earth/transition metal oxides
Applied Physics Letters, 85 (2004), 24, 5917 - 5919
I01
Batov I. E.,Schäpers Th.,Golubov A. A.,Ustinov A. V.
Andreev reflection and enhanced subgap conductance in NbN/Au/InGaAs-InP junctions
Journal of Applied Physics, 96 (2004), 6, 3366 - 3370
I01
Baunemann A.*,Becker R.*,Winter M.*,Fischer R. A.*,Thomas R.,Ehrhart P.,Waser R.,Devi A.*
Mononuclear precursor for MOCVD of HfO2 thin films
Chemical Communications, (2004), 14, 1610 - 1611
I01
Becher J.*,Liebegott H.*,Berlin P.,Klemm D.*
Novel xylylene deaminocellulose derivatives for enzyme immobilization
Cellulose, 11 (2004), 1, 119 - 126
I01
Becker J. S.,Pickhardt C.,Pompe W.*
Determination of Ag, Tl, and Pb in few milligrams of platinum nanoclusters by on-line isotope dilution in laser ablation inductively
coupled plasma mass spectrometry
International Journal of Mass Spectrometry, 237 (2004), 1, 13 - 17
I01
Becker W.-J.,Bohn H.
Impedanzspektrometrie - Prinzipien und Anwendungen
Technisches Messen, 71 (2004), 9, 451 - 453
I01
Belyaev A. E.,Makarovsky O.*,Walker D. J.*,Eaves L.*,Foxon C. T.*,Novikov S. V.*,Zhao L. X.*,Dykeman R. I.*,Danylyuk S.
V.,Vitusevich S. A.,Kappers M. J.*,Barnard J. S.*,Humphreys C. J.*
Resonance and current instabilities in AlN/GaN resonant tunnelling diodes
Physica E, 21 (2004), 2/4, 752 - 755
I01
Bernat J.,Javorka P.,Fox A.,Marso M.,Kordos P.
Influence of Layer Structure on Performance of AlGaN/GaN High Electron Mobility Transistors before and after Passivation
Journal of Electronic Materials, 33 (2004), 5, 436 - 439
I01
Bernát J.,Wolter M.,Fox A.,Marso M.,Flynn J.*,Brandes G.*,Kordos P.
Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs
Electronics Letters, 40 (2004), 1, 78 - 80
I01
Bernát J.,Wolter M.,Javorka P.,Fox A.,Marso M.,Kordos P.
Performance of unpassivated AlGaN/GaN/SiC HEMTs after short-term electrical bias stress
Solid-State Electronics, 48 (2004), 1825 - 1828
I01
Bhakta R.*,Thomas R.,Hipler F.*,Bettinger H.*,Müller J.*,Ehrhart P.,Devi A.*
Precursor engineering and evaluation: Studies on the nature of molecular mechanisms involved in the MOCVD of TiO2 thin
films
Journal of Materials Chemistry, 14 (2004), 3231 - 3238
259