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Strained Si HFETs for mircowave applications: state-of-the-art and further approaches
Solid-State Electronics, 48 (2004), 8, 1443 - 1452
I01
Ermolenko Yu.*,Yoshinobu T.,Mourzina Yu.,Vlasov Yu.*,Schöning M. J.,Iwasaki H.*
Laser-scanned silicon transducer (LSST) as a multisensor system
Sensors and Actuators B, 103 (2004), 1/2, 457 - 462
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Fardmanesh M.*,Schubert J.*,Akram R.*,Bick M.*,Banzet M.,Zander W.,Zhang Y.,Krause H.-J.
Analysis of Electrical Characteristics and Magnetic Field Dependencies of YBCO Step Edge and Bi-crystal Grain Boundary
Junctions for rf-SQUID Applications
Superconductor Science and Technology, 17 (2004), s375 - s380
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Filimonov S.,Voigtländer B.
'Rotating' steps in Si(0 0 1) homoepitaxy
Surface Science, 549 (2004), 31 - 36
I01
Fitsilis M.,Kohlstedt H.,Waser R.,Ullmann M.*
A new concept for using ferroelectric transistors in nonvolatile memories
Integrated Ferroelectrics, 60 (2004), 45 - 58
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Fujihara S.*,Schneller T.*,Waser R.
Interfacial reactions and microstructure of BaTiO3 films prepared using fluorideprecursor method
Applied Surface Science, 221 (2004), 178 - 183
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Gerber P.*,Kügeler C.*,Böttger U.*,Waser R.
Effects of ferroelectric switching on the piezoelectric small-signal response (d33) and electrostriction (M33) of lead zirconate
titanate thin films
Journal of Applied Physics, 95 (2004), 9, 4976 - 4980
I01
Gerber P.*,Roelofs A.*,Kügeler C.*,Böttger U.*,Waser R.,Prume K.*
Effects of the top-electode size on the piezoelectric properties (d(sub33) and S) of lead zirconate titanate thin films
Journal of Applied Physics, 96 (2004), 2800 - 2804
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Guzenko V. A.,Thillosen N.,Dahmen A.,Calarco R.,Schäpers Th.,Houben L.*,Luysberg M.*,Schineller B.,Heuken M.*,Kaluza A.*
Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions
Journal of Applied Physics, 96 (2004), 10, 5663 - 5667
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Hackbarth T.*,Herzog H.-J.*,Hieber K.-H.*,König U.*,Mantl S.,Holländer B.,Lenk St.,von Känel H.*,Enciso M.*,Aniel F.*,Giguerre
L.*
Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: effect of reduced self-heating on DC and RF
performance
Solid-State Electronics, 48 (2004), 10/11, 1921 - 1925
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Han B.,Li Z.,Pronkin S.,Wandlowski Th.
In situ - ATR-SEIRAS study of adsorption and phase formation of trimesic acid on Au(111-25nm) film electrodes
Canadian Journal of Chemistry, 82 (2004), 1481 - 1494
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Hardtdegen H.,Kaluza N.,Schmidt R.*,Steins R.,Yakovlev E. V.*,Talalaev R. A.*,Makarov Yu. N.*,Zettler J.-T.*
MOVPE growth and in situ characterization of GaN layers on sapphire substrates
Physica Status Solidi A, 201 (2004), 2, 312 - 319
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Hardtdegen H.,Kaluza N.,Steins R.,Schmidt R.*,Wirtz K.,Yakovlev E. V.*,Talalaev R. A.*,Makarov Yu. N.*
MOVPE process for horizontal reactors with reduced parasitic deposition
Journal of Crystal Growth, 272 (2004), 407 - 414
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He J. Q.*,Teren A.*,Jia C. L.,Erhart P.,Urban K.,Waser R.,Wang R. H.*
Microstructure and interfaces of HfO2 thin films grown on silicon substrates
Journal of Crystal Growth, 262 (2004), 295 - 303
I01,M02
Hofer C.*,Ellerkmann U.*,Halder S.*,Meyer R.,Waser R.
Scaling effect on the dielectric constant in Ba(TixZr1-x)O3 thin films
Journal of Electroceramics, 13 (2004), 1/3, 101 - 104
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