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Chapter 10 Memory Subsystem.pdf

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Public Version<br />

www.ti.com General-Purpose <strong>Memory</strong> Controller<br />

<strong>10</strong>.1.5.3.8.1 Access Time on Read Access<br />

In asynchronous read mode, for single and paged accesses, RDACCESSTIME field (i = 0 to 7) defines<br />

the number of GPMC_FCLK cycles from start access time to the GPMC_FCLK rising edge used for the<br />

first data capture. RDACCESSTIME must be programmed to the rounded greater GPMC_FCLK cycle<br />

value of the read access time of the attached memory device.<br />

In synchronous read mode, for single or burst accesses, RDACCESSTIME defines the number of<br />

GPMC_FCLK cycles from start access time to the GPMC_FCLK rising edge corresponding to the<br />

GPMC_CLK rising edge used for the first data capture.<br />

GPMC_CLK which is sent to the memory device for synchronization with the GPMC, is internally retimed<br />

to correctly latch the returned data. RDCYCLETIME must be greater than RDACCESSTIME in order to let<br />

the GPMC latch the last return data using the internally retimed GPMC_CLK.<br />

The external WAIT signal can be used in conjunction with RDACCESSTIME to control the effective GPMC<br />

data-capture GPMC_FCLK edge on read access in both asynchronous mode and synchronous mode. For<br />

details about wait monitoring, see Section <strong>10</strong>.1.5.4.<br />

<strong>10</strong>.1.5.3.8.2 Access Time on Write Access<br />

In asynchronous write mode, the GPMC_CONFIG6_i[28:24] WRACCESSTIME timing parameter is not<br />

used to define the effective write access time. Instead, it is used as a WAIT invalid timing window, and<br />

must be set to a correct value so that the gpmc_wait pin is at a valid state two GPMC_CLK cycles before<br />

WRACCESSTIME completes. For details about wait monitoring, see Section <strong>10</strong>.1.5.4.<br />

In synchronous write mode , for single or burst accesses, WRACCESSTIME defines the number of<br />

GPMC_FCLK cycles from start access time to the GPMC_CLK rising edge used by the memory device for<br />

the first data capture.<br />

The external WAIT signal can be used in conjunction with WRACCESSTIME to control the effective<br />

memory device data capture GPMC_CLK edge for a synchronous write access. For details about wait<br />

monitoring, see Section <strong>10</strong>.1.5.4.<br />

<strong>10</strong>.1.5.3.9 Page Burst Access Time (PAGEBURSTACCESSTIME)<br />

PAGEBURSTACCESSTIME is programmed in the GPMC.GPMC_CONFIG5_i[27:24] bit field (i = 0 to 7).<br />

PAGEBURSTACCESSTIME can be set from 0 to 15 GPMC_FCLK cycles with a granularity of one<br />

(GPMC.GPMC_CONFIG1_i[4] TIMEPARAGRANULARITY set to 0), or from 0 to 30 GPMC_FCLK cycles<br />

with a granularity of two (TIMEPARAGRANULARITY set to 1).<br />

<strong>10</strong>.1.5.3.9.1 Page Burst Access Time on Read Access<br />

In asynchronous page read mode, the delay between successive word captures in a page is controlled<br />

through the PAGEBURSTACCESSTIME bit field. The PAGEBURSTACCESSTIME parameter must be<br />

programmed to the rounded greater GPMC_FCLK cycle value of the read access time of the attached<br />

device.<br />

In synchronous burst read mode, the delay between successive word captures in a burst is controlled<br />

through the PAGEBURSTACCESSTIME field.<br />

The external WAIT signal can be used in conjunction with PAGEBURSTACCESSTIME to control the<br />

effective GPMC data capture GPMC_FCLK edge on read access. For details about wait monitoring, see<br />

Section <strong>10</strong>.1.5.4.<br />

<strong>10</strong>.1.5.3.9.2 Page Burst Access Time on Write Access<br />

Asynchronous page write mode is not supported. PAGEBURSTACCESSTIME is irrelevant in this case.<br />

In synchronous burst write mode, PAGEBURSTACCESSTIME controls the delay between successive<br />

memory device word captures in a burst.<br />

The external WAIT signal can be used in conjunction with PAGEBURSTACCESSTIME to control the<br />

effective memory-device data capture GPMC_CLK edge in synchronous write mode. For details about<br />

wait monitoring, see Section <strong>10</strong>.1.5.4.<br />

SPRUGN4L–May 20<strong>10</strong>–Revised June 2011 <strong>Memory</strong> <strong>Subsystem</strong><br />

Copyright © 20<strong>10</strong>–2011, Texas Instruments Incorporated<br />

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