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Chapter 10 Memory Subsystem.pdf

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nCS<br />

nBE0/CLE<br />

nWE<br />

Public Version<br />

www.ti.com General-Purpose <strong>Memory</strong> Controller<br />

Figure <strong>10</strong>-25. NAND Data Write Cycle<br />

CSONTIME=0<br />

WEONTIME=0<br />

WEOFFTIME<br />

DATA[15:0] Data<br />

WRCYCLETIME<br />

CSWROFFTIME = WRCYCLETIME<br />

<strong>10</strong>.1.5.14.1.6 NAND Device General Chip-Select Timing Control Requirement<br />

For most NAND devices, read data access time is dominated by nCS-to-data-valid timing and has faster<br />

nRE-to-data-valid timing. Successive accesses with nCS deassertions between accesses are affected by<br />

this timing constraint. Because accesses to a NAND device can be interleaved with other chip-select<br />

accesses, there is no certainty that nCS always stays low between two accesses to the same chip-select.<br />

Moreover, an nCS deassertion time between the same chip-select NAND accesses is likely to be required<br />

as follows: the nCS deassertion requires programming CYCLETIME and RDACCESSTIME according to<br />

the nCS-to-data-valid critical timing.<br />

To get full performance from NAND read and write accesses, the prefetch engine can dynamically reduce<br />

RDCYCLETIME, WRCYCLETIME, RDACCESSTIME, WRACCESSTIME, CSRDOFFTIME,<br />

CSWROFFTIME, ADVRDOFFTIME, ADVWROFFTIME, OEOFFTIME, and WEOFFTIME on back-to-back<br />

NAND accesses (to the same memory) and suppress the minimum nCS high pulse width between<br />

accesses. For more information about optimal prefetch engine access, see Section <strong>10</strong>.1.5.14.4, Prefetch<br />

and Write-Posting Engine.<br />

Some NAND devices require minimum write-to-read idle time, especially for device-status read accesses<br />

following status-read command programming (write access). If such write-to-read transactions are used, a<br />

minimum nCS high pulse width must be set. For this, CYCLE2CYCLESAMECSEN and<br />

CYCLE2CYCLEDELAY must be set according to the appropriate timing requirement to prevent any timing<br />

violation.<br />

NAND devices usually have an important nRE high to data bus in tristate mode. This requires a bus<br />

turnaround setting (BUSTURNAROUND = 1) so that the next access to a different chip-select is delayed<br />

until the BUSTURNAROUND delay completes. Back-to-back NAND read accesses to the same NAND<br />

flash are not affected by the programmed bus turnaround delay.<br />

<strong>10</strong>.1.5.14.1.7 Read and Write Access Size Adaptation<br />

<strong>10</strong>.1.5.14.1.7.1 8-Bit Wide NAND Device<br />

Host Word16 and Word32 read and write access requests to a chip-select associated with an 8-bit wide<br />

NAND device are split into successive read and write byte accesses to the NAND memory device. Byte<br />

access is ordered according to little-endian organization. A NAND 8-bit-wide device must be interfaced on<br />

the D0D7 interface bus lane. GPMC data accesses are justified on this bus lane when the chip-select is<br />

associated with an 8-bit wide NAND device.<br />

<strong>10</strong>.1.5.14.1.7.2 16-Bit Wide NAND Device<br />

Host Word32 read and write access requests to a chip-select associated with a 16-bit wide NAND device<br />

are split into successive read and write Word16 accesses to the NAND memory device. Word16 access is<br />

ordered according to little-endian organization.<br />

SPRUGN4L–May 20<strong>10</strong>–Revised June 2011 <strong>Memory</strong> <strong>Subsystem</strong><br />

Copyright © 20<strong>10</strong>–2011, Texas Instruments Incorporated<br />

gpmc-025<br />

2143

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