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Chapter 10 Memory Subsystem.pdf

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Public Version<br />

General-Purpose <strong>Memory</strong> Controller www.ti.com<br />

Table <strong>10</strong>-26 summarizes the level of the NOR interface signals applied to external devices or memories.<br />

Table <strong>10</strong>-26. NOR Interface Bus Operations Summary<br />

Bus operation CLK nADV nCS nOE nWE WAIT DQ[15:0]<br />

Read (asynchronous) x L L L H Asserted Output<br />

Read (synchronous) Running L L L H Driven Output<br />

Read (burst suspend) Halted x L H H Active Output<br />

Write x L L H L Asserted Input<br />

Output disable x x L H H Asserted High-Z<br />

Standby x x H x x High-Z High-Z<br />

<strong>10</strong>.1.6.2.1.4 Other Technologies<br />

Other supported device types interact with the GPMC through the NOR interface protocol.<br />

OneNAND is a high density and low-power memory device. OneNAND is based on a single- or<br />

multilevel-cell NAND core with SRAM and logic, and interfaces as a synchronous NOR flash; it also has<br />

synchronous write capability. It reads faster than conventional NAND and writes faster than conventionnal<br />

NOR flash. Therefore, it is appropriate for both mass storage and code storage.<br />

pSRAM is a low-power memory device for mobile applications. pSRAM is based on the DRAM cell with<br />

internal refresh and address control features, and interfaces as a synchronous NOR flash; it also has<br />

synchronous write capability.<br />

<strong>10</strong>.1.6.2.1.5 Supported Protocols<br />

The GPMC supports the following interface protocols when communicating with external memory or<br />

external devices:<br />

• Asynchronous read/write access<br />

• Asynchronous read page access (4-8-16 Word16)<br />

• Synchronous read/write access<br />

• Synchronous read burst access without wrap capability (4-8-16 Word16)<br />

• Synchronous read burst access with wrap capability (4-8-16 Word16)<br />

<strong>10</strong>.1.6.2.2 GPMC Features and Settings<br />

This section lists the GPMC features and settings:<br />

• Supported device type: up to eight NAND or NOR protocol external memories or devices<br />

• Operating voltage: 1.8 V<br />

• Maximum operating frequency provided externally: up to <strong>10</strong>0 MHz (single device) with an L3-clock of<br />

<strong>10</strong>0 MHz. Up to 83 MHz (L3-clock divided by two) with an L3-clock of 166 MHz.<br />

• Maximum GPMC addressing capability: 1 GB divided into eight chip-selects<br />

• Maximum supported memory size: 256 MB (must be a power-of-2)<br />

• Minimum supported memory size: 16 MB (must be a power-of-2). Aliasing occurs when addressing<br />

smaller memories.<br />

• Data path to external memory or device: 8- and 16-bit wide<br />

• Burst and page access: burst of 4-8-16 Word16<br />

• Supports bus keeping and bus turnaround<br />

<strong>10</strong>.1.7 GPMC Register Manual<br />

<strong>10</strong>.1.7.1 GPMC Instance Summary<br />

Table <strong>10</strong>-27 describes the GPMC instance.<br />

2176 <strong>Memory</strong> <strong>Subsystem</strong> SPRUGN4L–May 20<strong>10</strong>–Revised June 2011<br />

Copyright © 20<strong>10</strong>–2011, Texas Instruments Incorporated

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